Effect of microwave irradiation on the electrical and optical properties of SnO 2 thin films

Jae Hoon Bang, Namgue Lee, Ali Mirzaei, Myung Sik Choi, Han Gil Na, Changhyun Jin, Wansik Oum, Seokyoon Shin, Hyeong Su Choi, Hyunwoo Park, Yeonsik Choi, Hyeongtag Jeon, Hyoun Woo Kim

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We report the electrical and optical characteristics of SnO 2 thin films irradiated by microwaves (MWs) and grown using atomic layer deposition in a commercial MW oven operating at a frequency of 2.45 GHz. The properties of the MW-irradiated SnO 2 thin films were compared with those of the as-deposited SnO 2 thin films. After MW irradiation, the conductivity and transparency of the thin films were enhanced. In addition, the samples irradiated for 5 min showed optimal carrier concentration, Hall mobility, resistivity, and transmittance values of 1.5 × 10 20 cm −3 , 4.6 cm 2 /V s, 8 × 10 −3 Ω cm, and 95.77%, respectively. The improved properties of the MW-irradiated samples were attributed mainly to the formation of an oxygen vacancy in the SnO 2 lattice during MW irradiation. Our results can be applied for the fabrication of pure SnO 2 -based transparent conductive oxides; these oxides are generally doped with other elements.

Original languageEnglish
Pages (from-to)7723-7729
Number of pages7
JournalCeramics International
Volume45
Issue number6
DOIs
StatePublished - 15 Apr 2019

Keywords

  • Electrical and optical properties
  • Microwave irradiation
  • SnO
  • Transparent conductive oxide

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