Abstract
We report the electrical and optical characteristics of SnO 2 thin films irradiated by microwaves (MWs) and grown using atomic layer deposition in a commercial MW oven operating at a frequency of 2.45 GHz. The properties of the MW-irradiated SnO 2 thin films were compared with those of the as-deposited SnO 2 thin films. After MW irradiation, the conductivity and transparency of the thin films were enhanced. In addition, the samples irradiated for 5 min showed optimal carrier concentration, Hall mobility, resistivity, and transmittance values of 1.5 × 10 20 cm −3 , 4.6 cm 2 /V s, 8 × 10 −3 Ω cm, and 95.77%, respectively. The improved properties of the MW-irradiated samples were attributed mainly to the formation of an oxygen vacancy in the SnO 2 lattice during MW irradiation. Our results can be applied for the fabrication of pure SnO 2 -based transparent conductive oxides; these oxides are generally doped with other elements.
Original language | English |
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Pages (from-to) | 7723-7729 |
Number of pages | 7 |
Journal | Ceramics International |
Volume | 45 |
Issue number | 6 |
DOIs | |
State | Published - 15 Apr 2019 |
Keywords
- Electrical and optical properties
- Microwave irradiation
- SnO
- Transparent conductive oxide