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Effect of microwave irradiation on the electrical and optical properties of SnO 2 thin films

  • Jae Hoon Bang
  • , Namgue Lee
  • , Ali Mirzaei
  • , Myung Sik Choi
  • , Han Gil Na
  • , Changhyun Jin
  • , Wansik Oum
  • , Seokyoon Shin
  • , Hyeong Su Choi
  • , Hyunwoo Park
  • , Yeonsik Choi
  • , Hyeongtag Jeon
  • , Hyoun Woo Kim
  • Hanyang University
  • Shiraz University of Technology

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

We report the electrical and optical characteristics of SnO 2 thin films irradiated by microwaves (MWs) and grown using atomic layer deposition in a commercial MW oven operating at a frequency of 2.45 GHz. The properties of the MW-irradiated SnO 2 thin films were compared with those of the as-deposited SnO 2 thin films. After MW irradiation, the conductivity and transparency of the thin films were enhanced. In addition, the samples irradiated for 5 min showed optimal carrier concentration, Hall mobility, resistivity, and transmittance values of 1.5 × 10 20 cm −3 , 4.6 cm 2 /V s, 8 × 10 −3 Ω cm, and 95.77%, respectively. The improved properties of the MW-irradiated samples were attributed mainly to the formation of an oxygen vacancy in the SnO 2 lattice during MW irradiation. Our results can be applied for the fabrication of pure SnO 2 -based transparent conductive oxides; these oxides are generally doped with other elements.

Original languageEnglish
Pages (from-to)7723-7729
Number of pages7
JournalCeramics International
Volume45
Issue number6
DOIs
StatePublished - 15 Apr 2019

Keywords

  • Electrical and optical properties
  • Microwave irradiation
  • SnO
  • Transparent conductive oxide

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