Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition

Se Yun Kim; Joon Hyung Lee; Jeong Joo Kim; Young Woo Heo

doi:10.1016/j.ceramint.2018.06.241

Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO₂ films grown using pulsed laser deposition

Se Yun Kim
, Joon Hyung Lee
, Jeong Joo Kim
, Young Woo Heo

Daegu Gyeongbuk Institute of Science and Technology
Kyungpook National University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

In this study, the structural, electrical, and optical properties of CuCr_1−xNi_xO₂ epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al₂O₃ substrates using pulsed laser deposition at a growth temperature of 700 °C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr_0.95Ni_0.05O₂ film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO₂ film increased from 5.1 × 10¹⁴ to 2.2 × 10¹⁷ cm⁻³ upon doping with 5 at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni²⁺ dopants at Cr³⁺ sites formed an acceptor level without any charge compensation with Cu²⁺ and/or Cr⁴⁺.

Original language	English
Pages (from-to)	17743-17748
Number of pages	6
Journal	Ceramics International
Volume	44
Issue number	15
DOIs	https://doi.org/10.1016/j.ceramint.2018.06.241
State	Published - 15 Oct 2018

Keywords

CuCrO
Delafossite
Epitaxial
P-type transparent conductive oxide
Pulsed laser deposition
Thin film

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10.1016/j.ceramint.2018.06.241

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@article{b3bc3b2570d746219716c61dd4bf3c52,

title = "Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition",

abstract = "In this study, the structural, electrical, and optical properties of CuCr1−xNixO2 epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al2O3 substrates using pulsed laser deposition at a growth temperature of 700 °C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr0.95Ni0.05O2 film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO2 film increased from 5.1 × 1014 to 2.2 × 1017 cm−3 upon doping with 5 at\% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni2+ dopants at Cr3+ sites formed an acceptor level without any charge compensation with Cu2+ and/or Cr4+.",

keywords = "CuCrO, Delafossite, Epitaxial, P-type transparent conductive oxide, Pulsed laser deposition, Thin film",

author = "Kim, \{Se Yun\} and Lee, \{Joon Hyung\} and Kim, \{Jeong Joo\} and Heo, \{Young Woo\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd and Techna Group S.r.l.",

year = "2018",

month = oct,

day = "15",

doi = "10.1016/j.ceramint.2018.06.241",

language = "English",

volume = "44",

pages = "17743--17748",

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TY - JOUR

T1 - Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition

AU - Kim, Se Yun

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Heo, Young Woo

PY - 2018/10/15

Y1 - 2018/10/15

N2 - In this study, the structural, electrical, and optical properties of CuCr1−xNixO2 epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al2O3 substrates using pulsed laser deposition at a growth temperature of 700 °C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr0.95Ni0.05O2 film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO2 film increased from 5.1 × 1014 to 2.2 × 1017 cm−3 upon doping with 5 at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni2+ dopants at Cr3+ sites formed an acceptor level without any charge compensation with Cu2+ and/or Cr4+.

AB - In this study, the structural, electrical, and optical properties of CuCr1−xNixO2 epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al2O3 substrates using pulsed laser deposition at a growth temperature of 700 °C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr0.95Ni0.05O2 film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO2 film increased from 5.1 × 1014 to 2.2 × 1017 cm−3 upon doping with 5 at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni2+ dopants at Cr3+ sites formed an acceptor level without any charge compensation with Cu2+ and/or Cr4+.

KW - CuCrO

KW - Delafossite

KW - Epitaxial

KW - P-type transparent conductive oxide

KW - Pulsed laser deposition

KW - Thin film

UR - https://www.scopus.com/pages/publications/85049340373

U2 - 10.1016/j.ceramint.2018.06.241

DO - 10.1016/j.ceramint.2018.06.241

M3 - Article

AN - SCOPUS:85049340373

SN - 0272-8842

VL - 44

SP - 17743

EP - 17748

JO - Ceramics International

JF - Ceramics International

IS - 15

ER -

Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO₂ films grown using pulsed laser deposition

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Keywords

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