Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications

Saiful Haque Misha; Nusrat Tamanna; Jiyong Woo; Sangheon Lee; Jeonghwan Song; Jaesung Park; Seokjae Lim; Jaehyuk Park; Hyunsang Hwang

doi:10.1149/2.0011504ssl

Effect of nitrogen doping on variability of TaO_x-RRAM for low-power 3-bit MLC applications

Saiful Haque Misha
, Nusrat Tamanna
, Jiyong Woo
, Sangheon Lee
, Jeonghwan Song
, Jaesung Park
, Seokjae Lim
, Jaehyuk Park
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

The switching uniformity and reliability of the TaO_x based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.

Original language	English
Pages (from-to)	P25-P28
Journal	ECS Solid State Letters
Volume	4
Issue number	3
DOIs	https://doi.org/10.1149/2.0011504ssl
State	Published - 2015

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title = "Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications",

abstract = "The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.",

author = "Misha, \{Saiful Haque\} and Nusrat Tamanna and Jiyong Woo and Sangheon Lee and Jeonghwan Song and Jaesung Park and Seokjae Lim and Jaehyuk Park and Hyunsang Hwang",

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language = "English",

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T1 - Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications

AU - Misha, Saiful Haque

AU - Tamanna, Nusrat

AU - Woo, Jiyong

AU - Lee, Sangheon

AU - Song, Jeonghwan

AU - Park, Jaesung

AU - Lim, Seokjae

AU - Park, Jaehyuk

AU - Hwang, Hyunsang

PY - 2015

Y1 - 2015

N2 - The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.

AB - The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.

UR - https://www.scopus.com/pages/publications/84923370616

U2 - 10.1149/2.0011504ssl

DO - 10.1149/2.0011504ssl

M3 - Article

AN - SCOPUS:84923370616

SN - 2162-8742

VL - 4

SP - P25-P28

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 3

ER -

Effect of nitrogen doping on variability of TaO_x-RRAM for low-power 3-bit MLC applications

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