Effect of oxygen species on the positive flat-band voltage shift in Al 2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

Hee Sung Kang; M. Siva Pratap Reddy; Dong Seok Kim; Ki Won Kim; Jong Bong Ha; Yong Soo Lee; Hyun Chul Choi; Jung Hee Lee

doi:10.1088/0022-3727/46/15/155101

Effect of oxygen species on the positive flat-band voltage shift in Al ₂O₃/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

Hee Sung Kang, M. Siva Pratap Reddy, Dong Seok Kim, Ki Won Kim, Jong Bong Ha, Yong Soo Lee, Hyun Chul Choi, Jung Hee Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

The electrical characteristics of the Al₂O₃/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O₂ ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO _x N_y) interfacial layer is formed at Al₂O ₃/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al₂O₃. After PDA in O₂ ambient, the GaO_x N_y interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al₂O₃/GaN interface and hence positively shifting the flat band voltage (V_FB) for the capacitors.

Original language	English
Article number	155101
Journal	Journal Physics D: Applied Physics
Volume	46
Issue number	15
DOIs	https://doi.org/10.1088/0022-3727/46/15/155101
State	Published - 17 Apr 2013

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Kang, H. S., Siva Pratap Reddy, M., Kim, D. S., Kim, K. W., Ha, J. B., Lee, Y. S., Choi, H. C., & Lee, J. H. (2013). Effect of oxygen species on the positive flat-band voltage shift in Al ₂O₃/GaN metal-insulator-semiconductor capacitors with post-deposition annealing. Journal Physics D: Applied Physics, 46(15), Article 155101. https://doi.org/10.1088/0022-3727/46/15/155101

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title = "Effect of oxygen species on the positive flat-band voltage shift in Al 2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing",

abstract = "The electrical characteristics of the Al2O3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO x Ny) interfacial layer is formed at Al2O 3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O2 ambient, the GaOx Ny interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (VFB) for the capacitors.",

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AU - Kang, Hee Sung

AU - Siva Pratap Reddy, M.

AU - Kim, Dong Seok

AU - Kim, Ki Won

AU - Ha, Jong Bong

AU - Lee, Yong Soo

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

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N2 - The electrical characteristics of the Al2O3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO x Ny) interfacial layer is formed at Al2O 3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O2 ambient, the GaOx Ny interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (VFB) for the capacitors.

AB - The electrical characteristics of the Al2O3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO x Ny) interfacial layer is formed at Al2O 3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O2 ambient, the GaOx Ny interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (VFB) for the capacitors.

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Effect of oxygen species on the positive flat-band voltage shift in Al ₂O₃/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

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