Effect of oxygen species on the positive flat-band voltage shift in Al 2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

Hee Sung Kang; M. Siva Pratap Reddy; Dong Seok Kim; Ki Won Kim; Jong Bong Ha; Yong Soo Lee; Hyun Chul Choi; Jung Hee Lee

doi:10.1088/0022-3727/46/15/155101

Effect of oxygen species on the positive flat-band voltage shift in Al ₂O₃/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

Hee Sung Kang
, M. Siva Pratap Reddy
, Dong Seok Kim
, Ki Won Kim
, Jong Bong Ha
, Yong Soo Lee
, Hyun Chul Choi
, Jung Hee Lee

Kyungpook National University
Samsung Advanced Institute of Technology

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

The electrical characteristics of the Al₂O₃/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O₂ ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO _x N_y) interfacial layer is formed at Al₂O ₃/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al₂O₃. After PDA in O₂ ambient, the GaO_x N_y interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al₂O₃/GaN interface and hence positively shifting the flat band voltage (V_FB) for the capacitors.

Original language	English
Article number	155101
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	15
DOIs	https://doi.org/10.1088/0022-3727/46/15/155101
State	Published - 17 Apr 2013

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Kang, H. S., Siva Pratap Reddy, M., Kim, D. S., Kim, K. W., Ha, J. B., Lee, Y. S., Choi, H. C., & Lee, J. H. (2013). Effect of oxygen species on the positive flat-band voltage shift in Al ₂O₃/GaN metal-insulator-semiconductor capacitors with post-deposition annealing. Journal of Physics D: Applied Physics, 46(15), Article 155101. https://doi.org/10.1088/0022-3727/46/15/155101

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title = "Effect of oxygen species on the positive flat-band voltage shift in Al 2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing",

abstract = "The electrical characteristics of the Al2O3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO x Ny) interfacial layer is formed at Al2O 3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O2 ambient, the GaOx Ny interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (VFB) for the capacitors.",

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AU - Kang, Hee Sung

AU - Siva Pratap Reddy, M.

AU - Kim, Dong Seok

AU - Kim, Ki Won

AU - Ha, Jong Bong

AU - Lee, Yong Soo

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

PY - 2013/4/17

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N2 - The electrical characteristics of the Al2O3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO x Ny) interfacial layer is formed at Al2O 3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O2 ambient, the GaOx Ny interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (VFB) for the capacitors.

AB - The electrical characteristics of the Al2O3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO x Ny) interfacial layer is formed at Al2O 3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O2 ambient, the GaOx Ny interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (VFB) for the capacitors.

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DO - 10.1088/0022-3727/46/15/155101

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JO - Journal of Physics D: Applied Physics

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Effect of oxygen species on the positive flat-band voltage shift in Al ₂O₃/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

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