Effect of Pd-P layer on the bonding strength of Bi-Te thermoelectric elements

Sung Hwa Bae, Se Hun Han, Injoon Son, Kyung Tae Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this study, the effect of electroless Pd-P plating on the bonding strength of the Bi-Te thermoelectric elements was investigated. The bonding strength was approximately doubled by electroless Pd-P plating. Brittle Sn-Te intermetallic compounds were formed on the bonding interface of the thermoelectric elements without electroless Pd-P plating, and the fracture of the bond originated from these intermetallic compounds. A Pd-Sn solder reaction layer with a thickness of approximately 20 μm was formed under the Pd-P plating layer in the case of the electroless Pd-P plating, and prevented the diffusion of Bi and Te. In addition, the fracture did not occur on the bonding interface but in the thermoelectric elements for the electroless Pd-P plating because the bonding strength of the Pd-Sn reaction layer was higher than the shear strength of the thermoelectric elements.

Original languageEnglish
Pages (from-to)963-968
Number of pages6
JournalArchives of Metallurgy and Materials
Volume64
Issue number3
DOIs
StatePublished - 2019

Keywords

  • Bismuth-Telluride
  • Bonding strength
  • Electroless Pd-P plating
  • Thermoelectric module

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