Abstract
In this study, the effect of electroless Pd-P plating on the bonding strength of the Bi-Te thermoelectric elements was investigated. The bonding strength was approximately doubled by electroless Pd-P plating. Brittle Sn-Te intermetallic compounds were formed on the bonding interface of the thermoelectric elements without electroless Pd-P plating, and the fracture of the bond originated from these intermetallic compounds. A Pd-Sn solder reaction layer with a thickness of approximately 20 μm was formed under the Pd-P plating layer in the case of the electroless Pd-P plating, and prevented the diffusion of Bi and Te. In addition, the fracture did not occur on the bonding interface but in the thermoelectric elements for the electroless Pd-P plating because the bonding strength of the Pd-Sn reaction layer was higher than the shear strength of the thermoelectric elements.
| Original language | English |
|---|---|
| Pages (from-to) | 963-968 |
| Number of pages | 6 |
| Journal | Archives of Metallurgy and Materials |
| Volume | 64 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2019 |
Keywords
- Bismuth-Telluride
- Bonding strength
- Electroless Pd-P plating
- Thermoelectric module