Effect of rapid thermal annealing on the microstructural and optical properties of electrodeposited SnS thin films

H. M.M.N. Hennayaka; Ho Seong Lee

doi:10.1007/s13391-013-3040-3

Effect of rapid thermal annealing on the microstructural and optical properties of electrodeposited SnS thin films

H. M.M.N. Hennayaka, Ho Seong Lee

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We deposited SnS thin films on indium-tin-oxide (ITO) coated glass substrates using electrochemical deposition. The effect of rapid thermal annealing (RTA) on the microstructural evolution and optical properties of SnS thin films was investigated. The as-deposited films were composed of orthorhombic SnS and γ-Sn₂S₃. With an increase in the RTA temperature, the γ-Sn₂S₃ phase disappeared and the uniformity of the SnS films improved. The optical band gap of the as-deposited films was 1.44 eV. Increasing the RTA temperature to 200°C led to an increase in the optical band gap to 1.7 eV. These phenomena might be due to the compositional variations in the SnS films and to the formation of the SnO₂ oxide caused by post-growth thermal annealing.

Original language	English
Pages (from-to)	217-221
Number of pages	5
Journal	Electronic Materials Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1007/s13391-013-3040-3
State	Published - Jan 2014

Keywords

electrochemical deposition
rapid thermal annealing
SnS

Access to Document

10.1007/s13391-013-3040-3

Cite this

@article{49e5f81dadb0471cb97e88768656725e,

title = "Effect of rapid thermal annealing on the microstructural and optical properties of electrodeposited SnS thin films",

abstract = "We deposited SnS thin films on indium-tin-oxide (ITO) coated glass substrates using electrochemical deposition. The effect of rapid thermal annealing (RTA) on the microstructural evolution and optical properties of SnS thin films was investigated. The as-deposited films were composed of orthorhombic SnS and γ-Sn2S3. With an increase in the RTA temperature, the γ-Sn2S3 phase disappeared and the uniformity of the SnS films improved. The optical band gap of the as-deposited films was 1.44 eV. Increasing the RTA temperature to 200°C led to an increase in the optical band gap to 1.7 eV. These phenomena might be due to the compositional variations in the SnS films and to the formation of the SnO2 oxide caused by post-growth thermal annealing.",

keywords = "electrochemical deposition, rapid thermal annealing, SnS",

author = "Hennayaka, {H. M.M.N.} and Lee, {Ho Seong}",

year = "2014",

month = jan,

doi = "10.1007/s13391-013-3040-3",

language = "English",

volume = "10",

pages = "217--221",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "1",

}

TY - JOUR

T1 - Effect of rapid thermal annealing on the microstructural and optical properties of electrodeposited SnS thin films

AU - Hennayaka, H. M.M.N.

AU - Lee, Ho Seong

PY - 2014/1

Y1 - 2014/1

N2 - We deposited SnS thin films on indium-tin-oxide (ITO) coated glass substrates using electrochemical deposition. The effect of rapid thermal annealing (RTA) on the microstructural evolution and optical properties of SnS thin films was investigated. The as-deposited films were composed of orthorhombic SnS and γ-Sn2S3. With an increase in the RTA temperature, the γ-Sn2S3 phase disappeared and the uniformity of the SnS films improved. The optical band gap of the as-deposited films was 1.44 eV. Increasing the RTA temperature to 200°C led to an increase in the optical band gap to 1.7 eV. These phenomena might be due to the compositional variations in the SnS films and to the formation of the SnO2 oxide caused by post-growth thermal annealing.

AB - We deposited SnS thin films on indium-tin-oxide (ITO) coated glass substrates using electrochemical deposition. The effect of rapid thermal annealing (RTA) on the microstructural evolution and optical properties of SnS thin films was investigated. The as-deposited films were composed of orthorhombic SnS and γ-Sn2S3. With an increase in the RTA temperature, the γ-Sn2S3 phase disappeared and the uniformity of the SnS films improved. The optical band gap of the as-deposited films was 1.44 eV. Increasing the RTA temperature to 200°C led to an increase in the optical band gap to 1.7 eV. These phenomena might be due to the compositional variations in the SnS films and to the formation of the SnO2 oxide caused by post-growth thermal annealing.

KW - electrochemical deposition

KW - rapid thermal annealing

KW - SnS

UR - http://www.scopus.com/inward/record.url?scp=84893358653&partnerID=8YFLogxK

U2 - 10.1007/s13391-013-3040-3

DO - 10.1007/s13391-013-3040-3

M3 - Article

AN - SCOPUS:84893358653

SN - 1738-8090

VL - 10

SP - 217

EP - 221

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 1

ER -

Effect of rapid thermal annealing on the microstructural and optical properties of electrodeposited SnS thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this