Effect of SiC addition on sintering behavior and properties of indium tin oxide

Jung A. Lee; Hyung Ryul Park; Joon Hyung Lee; Yeong Woo Heo; Ju O. Park; Hee Young Lee; Jeong Joo Kim

doi:10.1166/jno.2012.1380

Effect of SiC addition on sintering behavior and properties of indium tin oxide

Jung A. Lee, Hyung Ryul Park, Joon Hyung Lee, Yeong Woo Heo, Ju O. Park, Hee Young Lee, Jeong Joo Kim

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Abstract

The sintering behavior of ITO ceramics with the addition of fine and coarse SiC was studied. SiC addition promoted the densification of ITO during early stage sintering compared to pure ITO. On the other hand, the addition of SiC resulted in the development of numerous pores in the microstructures due to the oxidation of SiC during sintering. In particular, swelling of the samples, which lead to an expansion of the sample, was observed when 1.0 wt% of fine SiC was added. Fine SiC particles are believed oxidize faster than coarse SiC particles, and SiC oxidation during sintering resulted in a low density and high porosity regardless of the SiC particle size.

Original language	English
Pages (from-to)	559-563
Number of pages	5
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	7
Issue number	5
DOIs	https://doi.org/10.1166/jno.2012.1380
State	Published - Oct 2012

Keywords

Oxidation
Silicon Carbide
Sintering
Tin-Doped Indium Oxide (ITO)

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title = "Effect of SiC addition on sintering behavior and properties of indium tin oxide",

abstract = "The sintering behavior of ITO ceramics with the addition of fine and coarse SiC was studied. SiC addition promoted the densification of ITO during early stage sintering compared to pure ITO. On the other hand, the addition of SiC resulted in the development of numerous pores in the microstructures due to the oxidation of SiC during sintering. In particular, swelling of the samples, which lead to an expansion of the sample, was observed when 1.0 wt% of fine SiC was added. Fine SiC particles are believed oxidize faster than coarse SiC particles, and SiC oxidation during sintering resulted in a low density and high porosity regardless of the SiC particle size.",

keywords = "Oxidation, Silicon Carbide, Sintering, Tin-Doped Indium Oxide (ITO)",

author = "Lee, {Jung A.} and Park, {Hyung Ryul} and Lee, {Joon Hyung} and Heo, {Yeong Woo} and Park, {Ju O.} and Lee, {Hee Young} and Kim, {Jeong Joo}",

year = "2012",

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doi = "10.1166/jno.2012.1380",

language = "English",

volume = "7",

pages = "559--563",

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TY - JOUR

T1 - Effect of SiC addition on sintering behavior and properties of indium tin oxide

AU - Lee, Jung A.

AU - Park, Hyung Ryul

AU - Lee, Joon Hyung

AU - Heo, Yeong Woo

AU - Park, Ju O.

AU - Lee, Hee Young

AU - Kim, Jeong Joo

PY - 2012/10

Y1 - 2012/10

N2 - The sintering behavior of ITO ceramics with the addition of fine and coarse SiC was studied. SiC addition promoted the densification of ITO during early stage sintering compared to pure ITO. On the other hand, the addition of SiC resulted in the development of numerous pores in the microstructures due to the oxidation of SiC during sintering. In particular, swelling of the samples, which lead to an expansion of the sample, was observed when 1.0 wt% of fine SiC was added. Fine SiC particles are believed oxidize faster than coarse SiC particles, and SiC oxidation during sintering resulted in a low density and high porosity regardless of the SiC particle size.

AB - The sintering behavior of ITO ceramics with the addition of fine and coarse SiC was studied. SiC addition promoted the densification of ITO during early stage sintering compared to pure ITO. On the other hand, the addition of SiC resulted in the development of numerous pores in the microstructures due to the oxidation of SiC during sintering. In particular, swelling of the samples, which lead to an expansion of the sample, was observed when 1.0 wt% of fine SiC was added. Fine SiC particles are believed oxidize faster than coarse SiC particles, and SiC oxidation during sintering resulted in a low density and high porosity regardless of the SiC particle size.

KW - Oxidation

KW - Silicon Carbide

KW - Sintering

KW - Tin-Doped Indium Oxide (ITO)

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DO - 10.1166/jno.2012.1380

M3 - Article

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SP - 559

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JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

IS - 5

ER -

Effect of SiC addition on sintering behavior and properties of indium tin oxide

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Keywords

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