Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors

Byeong Hyeon Lee; Dae Hwan Kim; Doo Yong Lee; Sungkyun Park; Sangsig Kim; Hyuck In Kwon; Sang Yeol Lee

doi:10.1007/s42341-021-00285-5

Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors

Byeong Hyeon Lee, Dae Hwan Kim, Doo Yong Lee, Sungkyun Park, Sangsig Kim, Hyuck In Kwon, Sang Yeol Lee

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The change of the electrical properties of amorphous SiInZnO thin-film transistors (SIZO TFTs) depending on Si concentration have been investigated. As the Si content increased from 1 to 3 wt%, the electrical properties are systematically degraded, such as field-effect mobility from 19.86 to 11.16 cm² V⁻¹ s⁻¹. This change in properties has been found to deteriorate the SIZO network when Si content is highly added. In order to analyze the change of the electrical properties of SIZO depending on Si concentration, low frequency noise method and X-ray photoelectron spectroscopy analysis are adopted to investigate trap states in energy bandgap and oxygen vacancies of SIZO system. As a result, it was found that doping with a large amount of Si destabilizes the SIZO network, resulting in degrading electrical properties.

Original language	English
Pages (from-to)	133-139
Number of pages	7
Journal	Transactions on Electrical and Electronic Materials
Volume	22
Issue number	2
DOIs	https://doi.org/10.1007/s42341-021-00285-5
State	Published - Apr 2021

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title = "Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors",

abstract = "The change of the electrical properties of amorphous SiInZnO thin-film transistors (SIZO TFTs) depending on Si concentration have been investigated. As the Si content increased from 1 to 3 wt%, the electrical properties are systematically degraded, such as field-effect mobility from 19.86 to 11.16 cm2 V−1 s−1. This change in properties has been found to deteriorate the SIZO network when Si content is highly added. In order to analyze the change of the electrical properties of SIZO depending on Si concentration, low frequency noise method and X-ray photoelectron spectroscopy analysis are adopted to investigate trap states in energy bandgap and oxygen vacancies of SIZO system. As a result, it was found that doping with a large amount of Si destabilizes the SIZO network, resulting in degrading electrical properties.",

author = "Lee, {Byeong Hyeon} and Kim, {Dae Hwan} and Lee, {Doo Yong} and Sungkyun Park and Sangsig Kim and Kwon, {Hyuck In} and Lee, {Sang Yeol}",

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doi = "10.1007/s42341-021-00285-5",

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T1 - Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors

AU - Lee, Byeong Hyeon

AU - Kim, Dae Hwan

AU - Lee, Doo Yong

AU - Park, Sungkyun

AU - Kim, Sangsig

AU - Kwon, Hyuck In

AU - Lee, Sang Yeol

PY - 2021/4

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AB - The change of the electrical properties of amorphous SiInZnO thin-film transistors (SIZO TFTs) depending on Si concentration have been investigated. As the Si content increased from 1 to 3 wt%, the electrical properties are systematically degraded, such as field-effect mobility from 19.86 to 11.16 cm2 V−1 s−1. This change in properties has been found to deteriorate the SIZO network when Si content is highly added. In order to analyze the change of the electrical properties of SIZO depending on Si concentration, low frequency noise method and X-ray photoelectron spectroscopy analysis are adopted to investigate trap states in energy bandgap and oxygen vacancies of SIZO system. As a result, it was found that doping with a large amount of Si destabilizes the SIZO network, resulting in degrading electrical properties.

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Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors

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