Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

K. H. Lee; J. Y. Lee; D. U. Lee; T. W. Kim; H. S. Lee; M. D. Kim

doi:10.1016/j.ssc.2004.08.010

Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

K. H. Lee, J. Y. Lee, D. U. Lee, T. W. Kim, H. S. Lee, M. D. Kim

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Abstract

The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investigated using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 650°C. When the InAs/GaAs QDs were annealed at 700°C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared at 800°C. PL spectra showed that the peaks corresponding to the interband transitions of the InAs QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can be modified due to postgrowth thermal annealing.

Original language	English
Pages (from-to)	65-70
Number of pages	6
Journal	Solid State Communications
Volume	133
Issue number	1
DOIs	https://doi.org/10.1016/j.ssc.2004.08.010
State	Published - Jan 2005

Keywords

A. Nanostructures
B. Crystal growth
C. Transmission electron microscopy
D. Optical properties

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10.1016/j.ssc.2004.08.010

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@article{54a811081c1d47f8a0f0d2a946a18b47,

title = "Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers",

abstract = "The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investigated using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 650°C. When the InAs/GaAs QDs were annealed at 700°C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared at 800°C. PL spectra showed that the peaks corresponding to the interband transitions of the InAs QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can be modified due to postgrowth thermal annealing.",

keywords = "A. Nanostructures, B. Crystal growth, C. Transmission electron microscopy, D. Optical properties",

author = "Lee, {K. H.} and Lee, {J. Y.} and Lee, {D. U.} and Kim, {T. W.} and Lee, {H. S.} and Kim, {M. D.}",

year = "2005",

month = jan,

doi = "10.1016/j.ssc.2004.08.010",

language = "English",

volume = "133",

pages = "65--70",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "1",

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TY - JOUR

T1 - Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

AU - Lee, K. H.

AU - Lee, J. Y.

AU - Lee, D. U.

AU - Kim, T. W.

AU - Lee, H. S.

AU - Kim, M. D.

PY - 2005/1

Y1 - 2005/1

N2 - The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investigated using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 650°C. When the InAs/GaAs QDs were annealed at 700°C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared at 800°C. PL spectra showed that the peaks corresponding to the interband transitions of the InAs QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can be modified due to postgrowth thermal annealing.

AB - The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investigated using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 650°C. When the InAs/GaAs QDs were annealed at 700°C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared at 800°C. PL spectra showed that the peaks corresponding to the interband transitions of the InAs QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can be modified due to postgrowth thermal annealing.

KW - A. Nanostructures

KW - B. Crystal growth

KW - C. Transmission electron microscopy

KW - D. Optical properties

UR - http://www.scopus.com/inward/record.url?scp=10444242667&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2004.08.010

DO - 10.1016/j.ssc.2004.08.010

M3 - Article

AN - SCOPUS:10444242667

SN - 0038-1098

VL - 133

SP - 65

EP - 70

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

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Keywords

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