Effect of thermal annealing on microstructural properties of Ti/Ge                         2                         Sb                         2                         Te                         5                         /Ti thin films deposited on SiO                         2                         /Si substrates by a sputtering method

S. Y. Kim; H. S. Lee; I. S. Chung; Y. J. Park; J. Y. Lee; T. W. Kim

doi:10.1016/j.apsusc.2006.08.038

Effect of thermal annealing on microstructural properties of Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited on SiO ₂ /Si substrates by a sputtering method

S. Y. Kim
, H. S. Lee
, I. S. Chung
, Y. J. Park
, J. Y. Lee
, T. W. Kim

Kyungpook National University
Korea Advanced Institute of Science and Technology
Hanyang University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited by a sputtering method on SiO ₂ /Si substrates were annealed at 400 °C in N ₂ atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/Ge ₂ Sb ₂ Te ₅ /Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge ₂ Sb ₂ Te ₅ layers was unstable and Ti atoms were incorporated into the Ge ₂ Sb ₂ Te ₅ thin film upon annealing. The Te and Sb atoms of the Ge ₂ Sb ₂ Te ₅ layer diffused into the Ti layer. The intermixing layers between the Ge ₂ Sb ₂ Te ₅ layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge ₂ Sb ₂ Te ₅ /Ti systems can be degraded by the postgrowth thermal annealing.

Original language	English
Pages (from-to)	4041-4044
Number of pages	4
Journal	Applied Surface Science
Volume	253
Issue number	8
DOIs	https://doi.org/10.1016/j.apsusc.2006.08.038
State	Published - 15 Feb 2007

Keywords

Diffusion
Ge Sb Te
Transmission electron microscopy

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10.1016/j.apsusc.2006.08.038

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Kim, S. Y., Lee, H. S., Chung, I. S., Park, Y. J., Lee, J. Y., & Kim, T. W. (2007). Effect of thermal annealing on microstructural properties of Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited on SiO ₂ /Si substrates by a sputtering method Applied Surface Science, 253(8), 4041-4044. https://doi.org/10.1016/j.apsusc.2006.08.038

Kim, S. Y. ; Lee, H. S. ; Chung, I. S. et al. / Effect of thermal annealing on microstructural properties of Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited on SiO ₂ /Si substrates by a sputtering method In: Applied Surface Science. 2007 ; Vol. 253, No. 8. pp. 4041-4044.

@article{b251834bf6e74eb584b2fbdffecf38a9,

title = " Effect of thermal annealing on microstructural properties of Ti/Ge 2 Sb 2 Te 5 /Ti thin films deposited on SiO 2 /Si substrates by a sputtering method ",

abstract = " Ti/Ge 2 Sb 2 Te 5 /Ti thin films deposited by a sputtering method on SiO 2 /Si substrates were annealed at 400 °C in N 2 atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/Ge 2 Sb 2 Te 5 /Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge 2 Sb 2 Te 5 layers was unstable and Ti atoms were incorporated into the Ge 2 Sb 2 Te 5 thin film upon annealing. The Te and Sb atoms of the Ge 2 Sb 2 Te 5 layer diffused into the Ti layer. The intermixing layers between the Ge 2 Sb 2 Te 5 layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge 2 Sb 2 Te 5 /Ti systems can be degraded by the postgrowth thermal annealing.",

keywords = "Diffusion, Ge Sb Te, Transmission electron microscopy",

author = "Kim, \{S. Y.\} and Lee, \{H. S.\} and Chung, \{I. S.\} and Park, \{Y. J.\} and Lee, \{J. Y.\} and Kim, \{T. W.\}",

year = "2007",

month = feb,

day = "15",

doi = "10.1016/j.apsusc.2006.08.038",

language = "English",

volume = "253",

pages = "4041--4044",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "8",

}

Kim, SY, Lee, HS, Chung, IS, Park, YJ, Lee, JY & Kim, TW 2007, ' Effect of thermal annealing on microstructural properties of Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited on SiO ₂ /Si substrates by a sputtering method ', Applied Surface Science, vol. 253, no. 8, pp. 4041-4044. https://doi.org/10.1016/j.apsusc.2006.08.038

Effect of thermal annealing on microstructural properties of Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited on SiO ₂ /Si substrates by a sputtering method . / Kim, S. Y.; Lee, H. S.; Chung, I. S. et al.
In: Applied Surface Science, Vol. 253, No. 8, 15.02.2007, p. 4041-4044.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of thermal annealing on microstructural properties of Ti/Ge 2 Sb 2 Te 5 /Ti thin films deposited on SiO 2 /Si substrates by a sputtering method

AU - Kim, S. Y.

AU - Lee, H. S.

AU - Chung, I. S.

AU - Park, Y. J.

AU - Lee, J. Y.

AU - Kim, T. W.

PY - 2007/2/15

Y1 - 2007/2/15

N2 - Ti/Ge 2 Sb 2 Te 5 /Ti thin films deposited by a sputtering method on SiO 2 /Si substrates were annealed at 400 °C in N 2 atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/Ge 2 Sb 2 Te 5 /Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge 2 Sb 2 Te 5 layers was unstable and Ti atoms were incorporated into the Ge 2 Sb 2 Te 5 thin film upon annealing. The Te and Sb atoms of the Ge 2 Sb 2 Te 5 layer diffused into the Ti layer. The intermixing layers between the Ge 2 Sb 2 Te 5 layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge 2 Sb 2 Te 5 /Ti systems can be degraded by the postgrowth thermal annealing.

AB - Ti/Ge 2 Sb 2 Te 5 /Ti thin films deposited by a sputtering method on SiO 2 /Si substrates were annealed at 400 °C in N 2 atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/Ge 2 Sb 2 Te 5 /Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge 2 Sb 2 Te 5 layers was unstable and Ti atoms were incorporated into the Ge 2 Sb 2 Te 5 thin film upon annealing. The Te and Sb atoms of the Ge 2 Sb 2 Te 5 layer diffused into the Ti layer. The intermixing layers between the Ge 2 Sb 2 Te 5 layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge 2 Sb 2 Te 5 /Ti systems can be degraded by the postgrowth thermal annealing.

KW - Diffusion

KW - Ge Sb Te

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/33846587452

U2 - 10.1016/j.apsusc.2006.08.038

DO - 10.1016/j.apsusc.2006.08.038

M3 - Article

AN - SCOPUS:33846587452

SN - 0169-4332

VL - 253

SP - 4041

EP - 4044

JO - Applied Surface Science

JF - Applied Surface Science

IS - 8

ER -

Kim SY, Lee HS, Chung IS, Park YJ, Lee JY, Kim TW. Effect of thermal annealing on microstructural properties of Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited on SiO ₂ /Si substrates by a sputtering method Applied Surface Science. 2007 Feb 15;253(8):4041-4044. doi: 10.1016/j.apsusc.2006.08.038

Effect of thermal annealing on microstructural properties of Ti/Ge ₂ Sb ₂ Te ₅ /Ti thin films deposited on SiO ₂ /Si substrates by a sputtering method

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Keywords

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