Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors fabricated via a solution process

Jong Chil Do; Cheol Hyoun Ahn; Hyung Koun Cho; Ho Seong Lee

doi:10.1088/0022-3727/45/22/225103

Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors fabricated via a solution process

Jong Chil Do, Cheol Hyoun Ahn, Hyung Koun Cho, Ho Seong Lee

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Thin-film transistors (TFTs) using a TiZnSnO (TZTO) channel layer were fabricated using a solgel process. The effect of Ti content on the device performance of the TZTO TFTs was investigated. With increasing content of Ti ions in ZTO, the off-current was significantly decreased and the threshold voltage shifted to the positive bias direction. This is the reason for the fact that the incorporation of Ti results in a reduction in the oxygen vacancy, acting as a carrier source, in the ZTO thin films. The TFT performance with 0.01M Ti exhibited a field-effect mobility ( _FE) and an on/off current ratio of 0.52cm ²V ¹s ¹ and 4.1×10 ⁵, respectively.

Original language	English
Article number	225103
Journal	Journal Physics D: Applied Physics
Volume	45
Issue number	22
DOIs	https://doi.org/10.1088/0022-3727/45/22/225103
State	Published - 6 Jun 2012

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title = "Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors fabricated via a solution process",

abstract = "Thin-film transistors (TFTs) using a TiZnSnO (TZTO) channel layer were fabricated using a solgel process. The effect of Ti content on the device performance of the TZTO TFTs was investigated. With increasing content of Ti ions in ZTO, the off-current was significantly decreased and the threshold voltage shifted to the positive bias direction. This is the reason for the fact that the incorporation of Ti results in a reduction in the oxygen vacancy, acting as a carrier source, in the ZTO thin films. The TFT performance with 0.01M Ti exhibited a field-effect mobility ( FE) and an on/off current ratio of 0.52cm 2V 1s 1 and 4.1×10 5, respectively.",

author = "Do, {Jong Chil} and Ahn, {Cheol Hyoun} and Cho, {Hyung Koun} and Lee, {Ho Seong}",

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T1 - Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors fabricated via a solution process

AU - Do, Jong Chil

AU - Ahn, Cheol Hyoun

AU - Cho, Hyung Koun

AU - Lee, Ho Seong

PY - 2012/6/6

Y1 - 2012/6/6

N2 - Thin-film transistors (TFTs) using a TiZnSnO (TZTO) channel layer were fabricated using a solgel process. The effect of Ti content on the device performance of the TZTO TFTs was investigated. With increasing content of Ti ions in ZTO, the off-current was significantly decreased and the threshold voltage shifted to the positive bias direction. This is the reason for the fact that the incorporation of Ti results in a reduction in the oxygen vacancy, acting as a carrier source, in the ZTO thin films. The TFT performance with 0.01M Ti exhibited a field-effect mobility ( FE) and an on/off current ratio of 0.52cm 2V 1s 1 and 4.1×10 5, respectively.

AB - Thin-film transistors (TFTs) using a TiZnSnO (TZTO) channel layer were fabricated using a solgel process. The effect of Ti content on the device performance of the TZTO TFTs was investigated. With increasing content of Ti ions in ZTO, the off-current was significantly decreased and the threshold voltage shifted to the positive bias direction. This is the reason for the fact that the incorporation of Ti results in a reduction in the oxygen vacancy, acting as a carrier source, in the ZTO thin films. The TFT performance with 0.01M Ti exhibited a field-effect mobility ( FE) and an on/off current ratio of 0.52cm 2V 1s 1 and 4.1×10 5, respectively.

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Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors fabricated via a solution process

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