Effect of tin (II and IV) iodide doping on organic–inorganic bismuth (III) iodide perovskite

Yeonghun Yun; Dokyum Kim; Byungjin Park; Young Woo Heo; Joon Hyung Lee; Sangwook Lee

doi:10.1016/j.matlet.2019.127166

Effect of tin (II and IV) iodide doping on organic–inorganic bismuth (III) iodide perovskite

Yeonghun Yun, Dokyum Kim, Byungjin Park, Young Woo Heo, Joon Hyung Lee, Sangwook Lee

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Herein, effects of doping methylamine bismuth iodide (MBI, (CH₃NH₃)₃Bi₂I₉), a lead-free perovskite halide material, with bismuth (III) iodide with the molar equivalent of tin (II or IV) iodides are investigated. The doping changes optical properties, surface chemical states, and energy band structure of MBI. SnI₄ doping shifts the Fermi level toward the valence band, while SnI₂ doping shifts it toward the conduction band. Our result demonstrates that Fermi level of a halide perovskite can be modified by doping.

Original language	English
Article number	127166
Journal	Materials Letters
Volume	262
DOIs	https://doi.org/10.1016/j.matlet.2019.127166
State	Published - 1 Mar 2020

Keywords

Doping
Fermi level
Halide
Perovskite

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10.1016/j.matlet.2019.127166

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title = "Effect of tin (II and IV) iodide doping on organic–inorganic bismuth (III) iodide perovskite",

abstract = "Herein, effects of doping methylamine bismuth iodide (MBI, (CH3NH3)3Bi2I9), a lead-free perovskite halide material, with bismuth (III) iodide with the molar equivalent of tin (II or IV) iodides are investigated. The doping changes optical properties, surface chemical states, and energy band structure of MBI. SnI4 doping shifts the Fermi level toward the valence band, while SnI2 doping shifts it toward the conduction band. Our result demonstrates that Fermi level of a halide perovskite can be modified by doping.",

keywords = "Doping, Fermi level, Halide, Perovskite",

author = "Yeonghun Yun and Dokyum Kim and Byungjin Park and Heo, {Young Woo} and Lee, {Joon Hyung} and Sangwook Lee",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = mar,

day = "1",

doi = "10.1016/j.matlet.2019.127166",

language = "English",

volume = "262",

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T1 - Effect of tin (II and IV) iodide doping on organic–inorganic bismuth (III) iodide perovskite

AU - Yun, Yeonghun

AU - Kim, Dokyum

AU - Park, Byungjin

AU - Heo, Young Woo

AU - Lee, Joon Hyung

AU - Lee, Sangwook

PY - 2020/3/1

Y1 - 2020/3/1

N2 - Herein, effects of doping methylamine bismuth iodide (MBI, (CH3NH3)3Bi2I9), a lead-free perovskite halide material, with bismuth (III) iodide with the molar equivalent of tin (II or IV) iodides are investigated. The doping changes optical properties, surface chemical states, and energy band structure of MBI. SnI4 doping shifts the Fermi level toward the valence band, while SnI2 doping shifts it toward the conduction band. Our result demonstrates that Fermi level of a halide perovskite can be modified by doping.

AB - Herein, effects of doping methylamine bismuth iodide (MBI, (CH3NH3)3Bi2I9), a lead-free perovskite halide material, with bismuth (III) iodide with the molar equivalent of tin (II or IV) iodides are investigated. The doping changes optical properties, surface chemical states, and energy band structure of MBI. SnI4 doping shifts the Fermi level toward the valence band, while SnI2 doping shifts it toward the conduction band. Our result demonstrates that Fermi level of a halide perovskite can be modified by doping.

KW - Doping

KW - Fermi level

KW - Halide

KW - Perovskite

UR - http://www.scopus.com/inward/record.url?scp=85076397791&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2019.127166

DO - 10.1016/j.matlet.2019.127166

M3 - Article

AN - SCOPUS:85076397791

SN - 0167-577X

VL - 262

JO - Materials Letters

JF - Materials Letters

M1 - 127166

ER -

Effect of tin (II and IV) iodide doping on organic–inorganic bismuth (III) iodide perovskite

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Keywords

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