Abstract
Full densification of Y 2 O 3 is challenging and requires a very high sintering temperature (above 1700 °C). In this study, the effect of ZnO and TiO 2 dopants on its densification was investigated, showing that both dopants lowered the sintering temperature and improved the process. Moreover, ZnO promoted the grain growth, while TiO 2 inhibited it; hence, the ZnO[sbnd]TiO 2 co-doping and the change in the ZnO/TiO 2 ratio allowed the control of the sintered body microstructure while maintaining high densification. Since Y 2 O 3 has a higher plasma erosion resistance than conventional Si-based materials, the plasma dry etching resistance of the sintered Y 2 O 3 was also evaluated and found superior due to the improved densification and controlled grain size of the doped samples.
Original language | English |
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Pages (from-to) | 13315-13318 |
Number of pages | 4 |
Journal | Ceramics International |
Volume | 45 |
Issue number | 10 |
DOIs | |
State | Published - Jul 2019 |
Keywords
- Doping
- Plasma etching resistance
- Sintering
- Y O