Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

Sang Yun Sung; Jun Hyuk Choi; Un Bin Han; Ki Chang Lee; Joon Hyung Lee; Jeong Joo Kim; Wantae Lim; S. J. Pearton; D. P. Norton; Young Woo Heo

doi:10.1063/1.3357431

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

Sang Yun Sung, Jun Hyuk Choi, Un Bin Han, Ki Chang Lee, Joon Hyung Lee, Jeong Joo Kim, Wantae Lim, S. J. Pearton, D. P. Norton, Young Woo Heo

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Abstract

We investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements. The threshold voltage and the drain current were changed by the ambient atmospheres. The threshold voltage shift (Δ Vth) under gate-bias stress was faster in hydrogen than in oxygen and vacuum. It is suggested that hydrogen exposure degrades the gate-bias stress stability due to surface accumulation layer creation. The characteristic trapping times, τ, in H ₂, O₂, air, and vacuum were 5× 10³, 1.5× 10⁴, 2× 10⁴, and 6.3× 10 ⁴ s, respectively.

Original language	English
Article number	102107
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3357431
State	Published - 2010

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Sung, S. Y., Choi, J. H., Han, U. B., Lee, K. C., Lee, J. H., Kim, J. J., Lim, W., Pearton, S. J., Norton, D. P., & Heo, Y. W. (2010). Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors. Applied Physics Letters, 96(10), Article 102107. https://doi.org/10.1063/1.3357431

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title = "Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors",

abstract = "We investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements. The threshold voltage and the drain current were changed by the ambient atmospheres. The threshold voltage shift (Δ Vth) under gate-bias stress was faster in hydrogen than in oxygen and vacuum. It is suggested that hydrogen exposure degrades the gate-bias stress stability due to surface accumulation layer creation. The characteristic trapping times, τ, in H 2, O2, air, and vacuum were 5× 103, 1.5× 104, 2× 104, and 6.3× 10 4 s, respectively.",

author = "Sung, {Sang Yun} and Choi, {Jun Hyuk} and Han, {Un Bin} and Lee, {Ki Chang} and Lee, {Joon Hyung} and Kim, {Jeong Joo} and Wantae Lim and Pearton, {S. J.} and Norton, {D. P.} and Heo, {Young Woo}",

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doi = "10.1063/1.3357431",

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T1 - Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

AU - Sung, Sang Yun

AU - Choi, Jun Hyuk

AU - Han, Un Bin

AU - Lee, Ki Chang

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Lim, Wantae

AU - Pearton, S. J.

AU - Norton, D. P.

AU - Heo, Young Woo

PY - 2010

Y1 - 2010

N2 - We investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements. The threshold voltage and the drain current were changed by the ambient atmospheres. The threshold voltage shift (Δ Vth) under gate-bias stress was faster in hydrogen than in oxygen and vacuum. It is suggested that hydrogen exposure degrades the gate-bias stress stability due to surface accumulation layer creation. The characteristic trapping times, τ, in H 2, O2, air, and vacuum were 5× 103, 1.5× 104, 2× 104, and 6.3× 10 4 s, respectively.

AB - We investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements. The threshold voltage and the drain current were changed by the ambient atmospheres. The threshold voltage shift (Δ Vth) under gate-bias stress was faster in hydrogen than in oxygen and vacuum. It is suggested that hydrogen exposure degrades the gate-bias stress stability due to surface accumulation layer creation. The characteristic trapping times, τ, in H 2, O2, air, and vacuum were 5× 103, 1.5× 104, 2× 104, and 6.3× 10 4 s, respectively.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

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