Effects of channel dimensions on performance of a- InGaZnO4 thin-film transistors

Young Woo Heo; Kwang Min Cho; Sang Yun Sun; Se Yun Kim; Joon Hyung Lee; Jeong Joo Kim; D. P. Norton; S. J. Pearton

doi:10.1116/1.3556921

Effects of channel dimensions on performance of a- InGaZnO₄ thin-film transistors

Young Woo Heo, Kwang Min Cho, Sang Yun Sun, Se Yun Kim, Joon Hyung Lee, Jeong Joo Kim, D. P. Norton, S. J. Pearton

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Abstract

The authors report an investigation of the effects of channel dimensions on the properties of amorphous- InGaZnO₄ (a-IGZO) thin-film transistors (TFTs) that are associated with surface depletion and surface/volume ratio. As the channel width decreased below a critical value of around 100 nm, the on current abruptly decreased and the threshold voltage abruptly increased. The magnitude of hysteresis behavior also depended on the channel size. Both of these effects result from the change of channel resistance that can be explained by surface changes due to adsorption of oxygen or water vapor. The authors also investigated short channel a-IGZO TFTs and observed short channel effects below a critical value of channel length of 900 nm. The breakdown electric field of a-IGZO was found to be in the range of 0.4-0.8 MV/cm.

Original language	English
Article number	021203
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	2
DOIs	https://doi.org/10.1116/1.3556921
State	Published - 2011

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title = "Effects of channel dimensions on performance of a- InGaZnO4 thin-film transistors",

abstract = "The authors report an investigation of the effects of channel dimensions on the properties of amorphous- InGaZnO4 (a-IGZO) thin-film transistors (TFTs) that are associated with surface depletion and surface/volume ratio. As the channel width decreased below a critical value of around 100 nm, the on current abruptly decreased and the threshold voltage abruptly increased. The magnitude of hysteresis behavior also depended on the channel size. Both of these effects result from the change of channel resistance that can be explained by surface changes due to adsorption of oxygen or water vapor. The authors also investigated short channel a-IGZO TFTs and observed short channel effects below a critical value of channel length of 900 nm. The breakdown electric field of a-IGZO was found to be in the range of 0.4-0.8 MV/cm.",

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T1 - Effects of channel dimensions on performance of a- InGaZnO4 thin-film transistors

AU - Heo, Young Woo

AU - Cho, Kwang Min

AU - Sun, Sang Yun

AU - Kim, Se Yun

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2011

Y1 - 2011

N2 - The authors report an investigation of the effects of channel dimensions on the properties of amorphous- InGaZnO4 (a-IGZO) thin-film transistors (TFTs) that are associated with surface depletion and surface/volume ratio. As the channel width decreased below a critical value of around 100 nm, the on current abruptly decreased and the threshold voltage abruptly increased. The magnitude of hysteresis behavior also depended on the channel size. Both of these effects result from the change of channel resistance that can be explained by surface changes due to adsorption of oxygen or water vapor. The authors also investigated short channel a-IGZO TFTs and observed short channel effects below a critical value of channel length of 900 nm. The breakdown electric field of a-IGZO was found to be in the range of 0.4-0.8 MV/cm.

AB - The authors report an investigation of the effects of channel dimensions on the properties of amorphous- InGaZnO4 (a-IGZO) thin-film transistors (TFTs) that are associated with surface depletion and surface/volume ratio. As the channel width decreased below a critical value of around 100 nm, the on current abruptly decreased and the threshold voltage abruptly increased. The magnitude of hysteresis behavior also depended on the channel size. Both of these effects result from the change of channel resistance that can be explained by surface changes due to adsorption of oxygen or water vapor. The authors also investigated short channel a-IGZO TFTs and observed short channel effects below a critical value of channel length of 900 nm. The breakdown electric field of a-IGZO was found to be in the range of 0.4-0.8 MV/cm.

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Effects of channel dimensions on performance of a- InGaZnO₄ thin-film transistors

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