TY - JOUR
T1 - Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation
AU - Son, Dong Hyeok
AU - Thingujam, Terirama
AU - Kim, Jeong Gil
AU - Kim, Dae Hyun
AU - Kang, In Man
AU - Im, Ki Sik
AU - Theodorou, Christoforos
AU - Ghibaudo, Gerard
AU - Cristoloveanu, Sorin
AU - Lee, Jung Hee
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - GaN-based materials are expected to show excellent immunity against short-channel effects because they have relatively lower permittivity and higher electron effective mass, compared to other materials such as Si, Ge, and In(Ga)As. To further reduce the short-channel effects, it is important to enhance the gate controllability of the device by utilizing a gate-all-around (GAA) structure. In this article, GaN vertical GAA nanowire MOSFETs with various diameters of 120, 75, and 45 nm have been fabricated. The device with a diameter of 120 nm shows a threshold voltage of 0.7 V, drain saturation voltage of 0.5 V, and subthreshold swing of 70 mV/decade, which would be suitable for low-voltage/power applications. However, the devices with smaller diameters of 75 and 45 nm show peculiar characteristics, such as a second rise of the drain current in output characteristics and a negative transconductance.
AB - GaN-based materials are expected to show excellent immunity against short-channel effects because they have relatively lower permittivity and higher electron effective mass, compared to other materials such as Si, Ge, and In(Ga)As. To further reduce the short-channel effects, it is important to enhance the gate controllability of the device by utilizing a gate-all-around (GAA) structure. In this article, GaN vertical GAA nanowire MOSFETs with various diameters of 120, 75, and 45 nm have been fabricated. The device with a diameter of 120 nm shows a threshold voltage of 0.7 V, drain saturation voltage of 0.5 V, and subthreshold swing of 70 mV/decade, which would be suitable for low-voltage/power applications. However, the devices with smaller diameters of 75 and 45 nm show peculiar characteristics, such as a second rise of the drain current in output characteristics and a negative transconductance.
KW - Contact potential
KW - GaN vertical nanowire MOSFET (VNW-MOSFET)
KW - Low-voltage application
KW - Nanowire diameter
KW - Negative transconductance (NT)
UR - http://www.scopus.com/inward/record.url?scp=85082851588&partnerID=8YFLogxK
U2 - 10.1109/TED.2020.2975599
DO - 10.1109/TED.2020.2975599
M3 - Article
AN - SCOPUS:85082851588
SN - 0018-9383
VL - 67
SP - 1547
EP - 1552
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
M1 - 9039709
ER -