Effects of Electrical Stress on the Mid-Gap Interface Trap Density and the Capture Cross Sections Characterized by Pulsed Interface Probing (PIP) Measurements

High-field electrical stress effects on the mid-gap interface trap density (D _ito) and the geometric mean capture cross sections (σ _o) in n-MOSFETs have been studied using the pulsed interface probing (PIP) method. The results show that the PIP technique is sensitive to changes in mid-gap trap cross-section values caused by the Fowler-Nordheim (F-N) electrical stress. A decrease in the mid-gap trap cross-sections following F-N tunneling injection is found. Our work also provides further insight into the influence of electrical stress on mid-gap interface trap generation in n-MOSFETs without the assumption of a constant capture cross-section value during F-N stresses.