Effects of high-dose Mn implantation into ZnO grown on sapphire

Y. W. Heo; M. P. Ivill; K. Ip; D. P. Norton; S. J. Pearton; J. G. Kelly; R. Rairigh; A. F. Hebard; T. Steiner

doi:10.1063/1.1690111

Effects of high-dose Mn implantation into ZnO grown on sapphire

Y. W. Heo, M. P. Ivill, K. Ip, D. P. Norton, S. J. Pearton, J. G. Kelly, R. Rairigh, A. F. Hebard, T. Steiner

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Abstract

The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al ₂O ₃ substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 ²⁰ cm ^-3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.

Original language	English
Pages (from-to)	2292-2294
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	13
DOIs	https://doi.org/10.1063/1.1690111
State	Published - 29 Mar 2004

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title = "Effects of high-dose Mn implantation into ZnO grown on sapphire",

abstract = "The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al 2O 3 substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 20 cm -3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.",

author = "Heo, {Y. W.} and Ivill, {M. P.} and K. Ip and Norton, {D. P.} and Pearton, {S. J.} and Kelly, {J. G.} and R. Rairigh and Hebard, {A. F.} and T. Steiner",

year = "2004",

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T1 - Effects of high-dose Mn implantation into ZnO grown on sapphire

AU - Heo, Y. W.

AU - Ivill, M. P.

AU - Ip, K.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kelly, J. G.

AU - Rairigh, R.

AU - Hebard, A. F.

AU - Steiner, T.

PY - 2004/3/29

Y1 - 2004/3/29

N2 - The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al 2O 3 substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 20 cm -3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.

AB - The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al 2O 3 substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 20 cm -3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.

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DO - 10.1063/1.1690111

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VL - 84

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EP - 2294

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Effects of high-dose Mn implantation into ZnO grown on sapphire

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