Effects of high-dose Mn implantation into ZnO grown on sapphire

Y. W. Heo; M. P. Ivill; K. Ip; D. P. Norton; S. J. Pearton; J. G. Kelly; R. Rairigh; A. F. Hebard; T. Steiner

doi:10.1063/1.1690111

Effects of high-dose Mn implantation into ZnO grown on sapphire

Y. W. Heo
, M. P. Ivill
, K. Ip
, D. P. Norton
, S. J. Pearton
, J. G. Kelly
, R. Rairigh
, A. F. Hebard
, T. Steiner

Research output: Contribution to journal › Article › peer-review

175 Scopus citations

Abstract

The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al ₂O ₃ substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 ²⁰ cm ^-3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.

Original language	English
Pages (from-to)	2292-2294
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	13
DOIs	https://doi.org/10.1063/1.1690111
State	Published - 29 Mar 2004

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title = "Effects of high-dose Mn implantation into ZnO grown on sapphire",

abstract = "The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al 2O 3 substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 20 cm -3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.",

author = "Heo, \{Y. W.\} and Ivill, \{M. P.\} and K. Ip and Norton, \{D. P.\} and Pearton, \{S. J.\} and Kelly, \{J. G.\} and R. Rairigh and Hebard, \{A. F.\} and T. Steiner",

year = "2004",

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doi = "10.1063/1.1690111",

language = "English",

volume = "84",

pages = "2292--2294",

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TY - JOUR

T1 - Effects of high-dose Mn implantation into ZnO grown on sapphire

AU - Heo, Y. W.

AU - Ivill, M. P.

AU - Ip, K.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kelly, J. G.

AU - Rairigh, R.

AU - Hebard, A. F.

AU - Steiner, T.

PY - 2004/3/29

Y1 - 2004/3/29

N2 - The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al 2O 3 substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 20 cm -3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.

AB - The effects of high-dose manganese (Mn) implantation into ZnO thin films grown on sapphire substrates which produces ferromagnetism for n-type doping levels were discussed. The ZnO films were grown by pulse-laser deposition on c-plane Al 2O 3 substrates. It was observed that films showed n-type carrier concentration in the range of 2-5 × 10 20 cm -3 and room temperature hysteresis in magnetization loops, after Mn implantation and subsequent annealing at 600°C. The coercivity and saturation magnetization were strong functions of the annealing temperature and thus carrier concentrations, crystalline quality and residual defects account for the magnetic properties of ZnO:Mn.

UR - https://www.scopus.com/pages/publications/2142655027

U2 - 10.1063/1.1690111

DO - 10.1063/1.1690111

M3 - Article

AN - SCOPUS:2142655027

SN - 0003-6951

VL - 84

SP - 2292

EP - 2294

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Effects of high-dose Mn implantation into ZnO grown on sapphire

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