Effects of high dose Ni, Fe, Co, and Mn implantation into SnO2

Y. W. Heo; J. Kelly; D. P. Norton; A. F. Hebard; S. J. Pearton; J. M. Zavada; L. A. Boatner

doi:10.1149/1.1814596

Effects of high dose Ni, Fe, Co, and Mn implantation into SnO₂

Y. W. Heo, J. Kelly, D. P. Norton, A. F. Hebard, S. J. Pearton, J. M. Zavada, L. A. Boatner

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Abstract

The effects of high dose (3 × 10¹⁶ cm^-2) implantation of Ni, Fe, Co, or Mn ions into bulk, single-crystal SnO ² substrates carried out at substrate temperature of ∼350°C to avoid amorphization of the implanted region on the magnetic properties of the material are reported. X-ray diffraction showed no evidence of secondary phase formation in the SnO₂. The Mn-implanted samples remained paramagnetic, as also reported for samples doped during thin film growth, but the Fe, Co-, and Ni-implanted SnO₂ showed evidence of hysteresis with approximate Curie temperatures of ∼120 K (Co and Cr) or 300 K (Fe). The carrier density in the implanted region appears to be too low to support carrier-mediated origin of the ferromagnetism and formation of bound magnetic polarons may be one explanation for the observed magnetic properties. The much reduced Curie temperature seen in Co-implanted SnO₂ compared to material doped during pulsed laser deposition suggests the residual implant damage degrades the magnetic properties.

Original language	English
Article number	4
Pages (from-to)	G309-G312
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	12
DOIs	https://doi.org/10.1149/1.1814596
State	Published - 2004

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title = "Effects of high dose Ni, Fe, Co, and Mn implantation into SnO2",

abstract = "The effects of high dose (3 × 1016 cm-2) implantation of Ni, Fe, Co, or Mn ions into bulk, single-crystal SnO 2 substrates carried out at substrate temperature of ∼350°C to avoid amorphization of the implanted region on the magnetic properties of the material are reported. X-ray diffraction showed no evidence of secondary phase formation in the SnO2. The Mn-implanted samples remained paramagnetic, as also reported for samples doped during thin film growth, but the Fe, Co-, and Ni-implanted SnO2 showed evidence of hysteresis with approximate Curie temperatures of ∼120 K (Co and Cr) or 300 K (Fe). The carrier density in the implanted region appears to be too low to support carrier-mediated origin of the ferromagnetism and formation of bound magnetic polarons may be one explanation for the observed magnetic properties. The much reduced Curie temperature seen in Co-implanted SnO2 compared to material doped during pulsed laser deposition suggests the residual implant damage degrades the magnetic properties.",

author = "Heo, {Y. W.} and J. Kelly and Norton, {D. P.} and Hebard, {A. F.} and Pearton, {S. J.} and Zavada, {J. M.} and Boatner, {L. A.}",

year = "2004",

doi = "10.1149/1.1814596",

language = "English",

volume = "7",

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journal = "Electrochemical and Solid-State Letters",

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T1 - Effects of high dose Ni, Fe, Co, and Mn implantation into SnO2

AU - Heo, Y. W.

AU - Kelly, J.

AU - Norton, D. P.

AU - Hebard, A. F.

AU - Pearton, S. J.

AU - Zavada, J. M.

AU - Boatner, L. A.

PY - 2004

Y1 - 2004

N2 - The effects of high dose (3 × 1016 cm-2) implantation of Ni, Fe, Co, or Mn ions into bulk, single-crystal SnO 2 substrates carried out at substrate temperature of ∼350°C to avoid amorphization of the implanted region on the magnetic properties of the material are reported. X-ray diffraction showed no evidence of secondary phase formation in the SnO2. The Mn-implanted samples remained paramagnetic, as also reported for samples doped during thin film growth, but the Fe, Co-, and Ni-implanted SnO2 showed evidence of hysteresis with approximate Curie temperatures of ∼120 K (Co and Cr) or 300 K (Fe). The carrier density in the implanted region appears to be too low to support carrier-mediated origin of the ferromagnetism and formation of bound magnetic polarons may be one explanation for the observed magnetic properties. The much reduced Curie temperature seen in Co-implanted SnO2 compared to material doped during pulsed laser deposition suggests the residual implant damage degrades the magnetic properties.

AB - The effects of high dose (3 × 1016 cm-2) implantation of Ni, Fe, Co, or Mn ions into bulk, single-crystal SnO 2 substrates carried out at substrate temperature of ∼350°C to avoid amorphization of the implanted region on the magnetic properties of the material are reported. X-ray diffraction showed no evidence of secondary phase formation in the SnO2. The Mn-implanted samples remained paramagnetic, as also reported for samples doped during thin film growth, but the Fe, Co-, and Ni-implanted SnO2 showed evidence of hysteresis with approximate Curie temperatures of ∼120 K (Co and Cr) or 300 K (Fe). The carrier density in the implanted region appears to be too low to support carrier-mediated origin of the ferromagnetism and formation of bound magnetic polarons may be one explanation for the observed magnetic properties. The much reduced Curie temperature seen in Co-implanted SnO2 compared to material doped during pulsed laser deposition suggests the residual implant damage degrades the magnetic properties.

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U2 - 10.1149/1.1814596

DO - 10.1149/1.1814596

M3 - Article

AN - SCOPUS:10944258476

SN - 1099-0062

VL - 7

SP - G309-G312

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

M1 - 4

ER -

Effects of high dose Ni, Fe, Co, and Mn implantation into SnO₂

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