Effects of Nb doping on the thermoelectric performance of CuI doped n-type Bi2Te3

Innocent Thato Marekwa; Samuel Kimani Kihoi; Joseph Ngugi Kahiu; Hyunji Kim; Dong Hyun Shin; Ho Seong Lee

doi:10.1088/1361-6463/ad809e

Effects of Nb doping on the thermoelectric performance of CuI doped n-type Bi₂Te₃

Innocent Thato Marekwa, Samuel Kimani Kihoi, Joseph Ngugi Kahiu, Hyunji Kim, Dong Hyun Shin, Ho Seong Lee

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

Abstract

The thermoelectric (TE) properties of Nb-doped (CuI)_0.003Bi_2−xNb_xTe_2.7Se_0.3 compounds (x = 0, 0.005, 0.01 and 0.03), were investigated at temperatures ranging from 300 to 600 K. Among the compounds studied, the lightly substituted (CuI)_0.003Bi_1.995Nb_0.005Te_2.7Se_0.3 compound exhibited the best TE performance due to the improvement in its electrical conductivity and its relatively unchanged Seebeck coefficient due to Nb doping. Its figure of merit, ZT, was greater than the undoped (CuI)_0.003Bi₂Te_2.7Se_0.3 compound for the temperature range investigated. In particular, the ZT of (CuI)_0.003Bi_1.995Nb_0.005Te_2.7Se_0.3 reached a value of 0.65 at 448 K in this study.

Original language	English
Article number	025501
Journal	Journal of Physics D: Applied Physics
Volume	58
Issue number	2
DOIs	https://doi.org/10.1088/1361-6463/ad809e
State	Published - 13 Jan 2025

Keywords

bismuth telluride
electrical transport
figure of merit
Nb doping
thermoelectric

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title = "Effects of Nb doping on the thermoelectric performance of CuI doped n-type Bi2Te3",

abstract = "The thermoelectric (TE) properties of Nb-doped (CuI)0.003Bi2−xNbxTe2.7Se0.3 compounds (x = 0, 0.005, 0.01 and 0.03), were investigated at temperatures ranging from 300 to 600 K. Among the compounds studied, the lightly substituted (CuI)0.003Bi1.995Nb0.005Te2.7Se0.3 compound exhibited the best TE performance due to the improvement in its electrical conductivity and its relatively unchanged Seebeck coefficient due to Nb doping. Its figure of merit, ZT, was greater than the undoped (CuI)0.003Bi2Te2.7Se0.3 compound for the temperature range investigated. In particular, the ZT of (CuI)0.003Bi1.995Nb0.005Te2.7Se0.3 reached a value of 0.65 at 448 K in this study.",

keywords = "bismuth telluride, electrical transport, figure of merit, Nb doping, thermoelectric",

author = "Marekwa, \{Innocent Thato\} and Kihoi, \{Samuel Kimani\} and Kahiu, \{Joseph Ngugi\} and Hyunji Kim and Shin, \{Dong Hyun\} and Lee, \{Ho Seong\}",

note = "Publisher Copyright: {\textcopyright} 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.",

year = "2025",

month = jan,

day = "13",

doi = "10.1088/1361-6463/ad809e",

language = "English",

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TY - JOUR

T1 - Effects of Nb doping on the thermoelectric performance of CuI doped n-type Bi2Te3

AU - Marekwa, Innocent Thato

AU - Kihoi, Samuel Kimani

AU - Kahiu, Joseph Ngugi

AU - Kim, Hyunji

AU - Shin, Dong Hyun

AU - Lee, Ho Seong

PY - 2025/1/13

Y1 - 2025/1/13

N2 - The thermoelectric (TE) properties of Nb-doped (CuI)0.003Bi2−xNbxTe2.7Se0.3 compounds (x = 0, 0.005, 0.01 and 0.03), were investigated at temperatures ranging from 300 to 600 K. Among the compounds studied, the lightly substituted (CuI)0.003Bi1.995Nb0.005Te2.7Se0.3 compound exhibited the best TE performance due to the improvement in its electrical conductivity and its relatively unchanged Seebeck coefficient due to Nb doping. Its figure of merit, ZT, was greater than the undoped (CuI)0.003Bi2Te2.7Se0.3 compound for the temperature range investigated. In particular, the ZT of (CuI)0.003Bi1.995Nb0.005Te2.7Se0.3 reached a value of 0.65 at 448 K in this study.

AB - The thermoelectric (TE) properties of Nb-doped (CuI)0.003Bi2−xNbxTe2.7Se0.3 compounds (x = 0, 0.005, 0.01 and 0.03), were investigated at temperatures ranging from 300 to 600 K. Among the compounds studied, the lightly substituted (CuI)0.003Bi1.995Nb0.005Te2.7Se0.3 compound exhibited the best TE performance due to the improvement in its electrical conductivity and its relatively unchanged Seebeck coefficient due to Nb doping. Its figure of merit, ZT, was greater than the undoped (CuI)0.003Bi2Te2.7Se0.3 compound for the temperature range investigated. In particular, the ZT of (CuI)0.003Bi1.995Nb0.005Te2.7Se0.3 reached a value of 0.65 at 448 K in this study.

KW - bismuth telluride

KW - electrical transport

KW - figure of merit

KW - Nb doping

KW - thermoelectric

UR - https://www.scopus.com/pages/publications/85218632619

U2 - 10.1088/1361-6463/ad809e

DO - 10.1088/1361-6463/ad809e

M3 - Article

AN - SCOPUS:85218632619

SN - 0022-3727

VL - 58

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 2

M1 - 025501

ER -

Effects of Nb doping on the thermoelectric performance of CuI doped n-type Bi₂Te₃

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Keywords

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