Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

Jae Hyung Kim; Joon Hyung Lee; Young Woo Heo; Jeong Joo Kim; Ju O. Park

doi:10.1007/s10832-007-9351-8

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

Jae Hyung Kim, Joon Hyung Lee, Young Woo Heo, Jeong Joo Kim, Ju O. Park

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

In this study, effects of oxygen pressure in the sputtering ambient on the preferential orientation and resultant surface morphology of ITO films grown by RF magnetron sputtering were investigated. ITO film grown with pure Ar gas shows a preferential (400) plane orientation parallel to the substrate surface and a sawteeth-shaped rough surface. ITO film grown in the sputtering ambient of Ar and oxygen mixtures shows a preferential (222) plane orientation and a flat and smooth surface. The differences in the growth rate, surface morphology, and roughness between the preferentially orientated films were discussed in terms of the surface energy of planes. The electrical and optical properties of the films were examined.

Original language	English
Pages (from-to)	169-174
Number of pages	6
Journal	Journal of Electroceramics
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-007-9351-8
State	Published - Oct 2009

Keywords

ITO
Oxygen partial pressure
RF magnetron sputtering
Surface morphology

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10.1007/s10832-007-9351-8

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abstract = "In this study, effects of oxygen pressure in the sputtering ambient on the preferential orientation and resultant surface morphology of ITO films grown by RF magnetron sputtering were investigated. ITO film grown with pure Ar gas shows a preferential (400) plane orientation parallel to the substrate surface and a sawteeth-shaped rough surface. ITO film grown in the sputtering ambient of Ar and oxygen mixtures shows a preferential (222) plane orientation and a flat and smooth surface. The differences in the growth rate, surface morphology, and roughness between the preferentially orientated films were discussed in terms of the surface energy of planes. The electrical and optical properties of the films were examined.",

keywords = "ITO, Oxygen partial pressure, RF magnetron sputtering, Surface morphology",

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AU - Kim, Jae Hyung

AU - Lee, Joon Hyung

AU - Heo, Young Woo

AU - Kim, Jeong Joo

AU - Park, Ju O.

PY - 2009/10

Y1 - 2009/10

N2 - In this study, effects of oxygen pressure in the sputtering ambient on the preferential orientation and resultant surface morphology of ITO films grown by RF magnetron sputtering were investigated. ITO film grown with pure Ar gas shows a preferential (400) plane orientation parallel to the substrate surface and a sawteeth-shaped rough surface. ITO film grown in the sputtering ambient of Ar and oxygen mixtures shows a preferential (222) plane orientation and a flat and smooth surface. The differences in the growth rate, surface morphology, and roughness between the preferentially orientated films were discussed in terms of the surface energy of planes. The electrical and optical properties of the films were examined.

AB - In this study, effects of oxygen pressure in the sputtering ambient on the preferential orientation and resultant surface morphology of ITO films grown by RF magnetron sputtering were investigated. ITO film grown with pure Ar gas shows a preferential (400) plane orientation parallel to the substrate surface and a sawteeth-shaped rough surface. ITO film grown in the sputtering ambient of Ar and oxygen mixtures shows a preferential (222) plane orientation and a flat and smooth surface. The differences in the growth rate, surface morphology, and roughness between the preferentially orientated films were discussed in terms of the surface energy of planes. The electrical and optical properties of the films were examined.

KW - ITO

KW - Oxygen partial pressure

KW - RF magnetron sputtering

KW - Surface morphology

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SN - 1385-3449

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JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 2-4

ER -

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

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