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Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high-electron-mobility transistors for X-band applications

  • Sung Jae Chang
  • , Hyeon Seok Jeong
  • , Hyun Wook Jung
  • , Su Min Choi
  • , Il Gyu Choi
  • , Youn Sub Noh
  • , Seong Il Kim
  • , Sang Heung Lee
  • , Ho Kyun Ahn
  • , Dong Min Kang
  • , Dae Hyun Kim
  • , Jong Won Lim
  • Electronics and Telecommunications Research Institute
  • Kyungpook National University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

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