Effects of RESET current overshoot and resistance state on reliability of RRAM

Jeonghwan Song; Daeseok Lee; Jiyong Woo; Yunmo Koo; Euijun Cha; Sangheon Lee; Jaesung Park; Kibong Moon; Saiful Haque Misha; Amit Prakash; Hyunsang Hwang

doi:10.1109/LED.2014.2316544

Effects of RESET current overshoot and resistance state on reliability of RRAM

Jeonghwan Song
, Daeseok Lee
, Jiyong Woo
, Yunmo Koo
, Euijun Cha
, Sangheon Lee
, Jaesung Park
, Kibong Moon
, Saiful Haque Misha
, Amit Prakash
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET process is caused by parasitic capacitance. In this letter, we observed a different type of current overshoot during the RESET process. The RESET current overshoot was confirmed to have severe effects on the endurance of RRAM. We also demonstrated the relation between the current overshoot and the intrinsic capacitive elements of each state of RRAM. Finally, an optimized pulse shape was proposed to minimize the current overshoot and was experimentally verified to significantly improve the variability and endurance in a typical RRAM device with a W/Zr/HfO₂/TiN structure.

Original language	English
Article number	6800048
Pages (from-to)	636-638
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	6
DOIs	https://doi.org/10.1109/LED.2014.2316544
State	Published - Jun 2014

Keywords

current overshoot
endurance
optimized pulse shape
RRAM
variability

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10.1109/LED.2014.2316544

Cite this

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title = "Effects of RESET current overshoot and resistance state on reliability of RRAM",

abstract = "Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET process is caused by parasitic capacitance. In this letter, we observed a different type of current overshoot during the RESET process. The RESET current overshoot was confirmed to have severe effects on the endurance of RRAM. We also demonstrated the relation between the current overshoot and the intrinsic capacitive elements of each state of RRAM. Finally, an optimized pulse shape was proposed to minimize the current overshoot and was experimentally verified to significantly improve the variability and endurance in a typical RRAM device with a W/Zr/HfO2/TiN structure.",

keywords = "current overshoot, endurance, optimized pulse shape, RRAM, variability",

author = "Jeonghwan Song and Daeseok Lee and Jiyong Woo and Yunmo Koo and Euijun Cha and Sangheon Lee and Jaesung Park and Kibong Moon and Misha, \{Saiful Haque\} and Amit Prakash and Hyunsang Hwang",

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T1 - Effects of RESET current overshoot and resistance state on reliability of RRAM

AU - Song, Jeonghwan

AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Koo, Yunmo

AU - Cha, Euijun

AU - Lee, Sangheon

AU - Park, Jaesung

AU - Moon, Kibong

AU - Misha, Saiful Haque

AU - Prakash, Amit

AU - Hwang, Hyunsang

PY - 2014/6

Y1 - 2014/6

N2 - Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET process is caused by parasitic capacitance. In this letter, we observed a different type of current overshoot during the RESET process. The RESET current overshoot was confirmed to have severe effects on the endurance of RRAM. We also demonstrated the relation between the current overshoot and the intrinsic capacitive elements of each state of RRAM. Finally, an optimized pulse shape was proposed to minimize the current overshoot and was experimentally verified to significantly improve the variability and endurance in a typical RRAM device with a W/Zr/HfO2/TiN structure.

AB - Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET process is caused by parasitic capacitance. In this letter, we observed a different type of current overshoot during the RESET process. The RESET current overshoot was confirmed to have severe effects on the endurance of RRAM. We also demonstrated the relation between the current overshoot and the intrinsic capacitive elements of each state of RRAM. Finally, an optimized pulse shape was proposed to minimize the current overshoot and was experimentally verified to significantly improve the variability and endurance in a typical RRAM device with a W/Zr/HfO2/TiN structure.

KW - current overshoot

KW - endurance

KW - optimized pulse shape

KW - RRAM

KW - variability

UR - https://www.scopus.com/pages/publications/84901376809

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DO - 10.1109/LED.2014.2316544

M3 - Article

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SN - 0741-3106

VL - 35

SP - 636

EP - 638

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 6800048

ER -

Effects of RESET current overshoot and resistance state on reliability of RRAM

Abstract

Keywords

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