Abstract
Flexible TiO2 films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible TiO2 films were dependent on the sputtering pressure and O2/Ar gas ratio during the sputtering process. All TiO2 films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and O2 gas concentration. The TiO2 films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The TiO2 films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of 5 ∼ 6 × 10-7A/cm2 at 3 MV/cm.
Original language | English |
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Pages (from-to) | 190-196 |
Number of pages | 7 |
Journal | Journal of the Korean Ceramic Society |
Volume | 51 |
Issue number | 3 |
DOIs | |
State | Published - May 2014 |
Keywords
- Dielectric constant
- High-energy-density capacitor
- Leakage current
- Roll-to-roll sputter