Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Dong Hyeok Son; Young Woo Jo; V. Sindhuri; Ki Sik Im; Jae Hwa Seo; Yong Tae Kim; In Man Kang; Sorin Cristoloveanu; Maryline Bawedin; Jung Hee Lee

doi:10.1016/j.mee.2015.04.101

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Dong Hyeok Son, Young Woo Jo, V. Sindhuri, Ki Sik Im, Jae Hwa Seo, Yong Tae Kim, In Man Kang, Sorin Cristoloveanu, Maryline Bawedin, Jung Hee Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

AlGaN/GaN FinFETs with various fin widths (W_fin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide W_fin of 150 nm showed normally-on operation with threshold voltage (V_th) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (g_m), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with W_fin of 50 nm exhibited normally-off operation with V_th of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.

Original language	English
Pages (from-to)	155-158
Number of pages	4
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.101
State	Published - 1 Nov 2015

Keywords

2DEG
AlGaN/GaN
Fin width
FinFET
TMAH solution
Trapping/detrapping

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10.1016/j.mee.2015.04.101

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@article{339af28c499445eda5d0dc81cbafa76d,

title = "Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET",

abstract = "AlGaN/GaN FinFETs with various fin widths (Wfin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide Wfin of 150 nm showed normally-on operation with threshold voltage (Vth) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (gm), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with Wfin of 50 nm exhibited normally-off operation with Vth of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.",

keywords = "2DEG, AlGaN/GaN, Fin width, FinFET, TMAH solution, Trapping/detrapping",

author = "Son, {Dong Hyeok} and Jo, {Young Woo} and V. Sindhuri and Im, {Ki Sik} and Seo, {Jae Hwa} and Kim, {Yong Tae} and Kang, {In Man} and Sorin Cristoloveanu and Maryline Bawedin and Lee, {Jung Hee}",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.mee.2015.04.101",

language = "English",

volume = "147",

pages = "155--158",

journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

AU - Son, Dong Hyeok

AU - Jo, Young Woo

AU - Sindhuri, V.

AU - Im, Ki Sik

AU - Seo, Jae Hwa

AU - Kim, Yong Tae

AU - Kang, In Man

AU - Cristoloveanu, Sorin

AU - Bawedin, Maryline

AU - Lee, Jung Hee

PY - 2015/11/1

Y1 - 2015/11/1

N2 - AlGaN/GaN FinFETs with various fin widths (Wfin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide Wfin of 150 nm showed normally-on operation with threshold voltage (Vth) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (gm), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with Wfin of 50 nm exhibited normally-off operation with Vth of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.

AB - AlGaN/GaN FinFETs with various fin widths (Wfin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide Wfin of 150 nm showed normally-on operation with threshold voltage (Vth) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (gm), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with Wfin of 50 nm exhibited normally-off operation with Vth of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.

KW - 2DEG

KW - AlGaN/GaN

KW - Fin width

KW - FinFET

KW - TMAH solution

KW - Trapping/detrapping

UR - http://www.scopus.com/inward/record.url?scp=84928389904&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.04.101

DO - 10.1016/j.mee.2015.04.101

M3 - Article

AN - SCOPUS:84928389904

SN - 0167-9317

VL - 147

SP - 155

EP - 158

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Abstract

Keywords

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