Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Dong Hyeok Son; Young Woo Jo; V. Sindhuri; Ki Sik Im; Jae Hwa Seo; Yong Tae Kim; In Man Kang; Sorin Cristoloveanu; Maryline Bawedin; Jung Hee Lee

doi:10.1016/j.mee.2015.04.101

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Dong Hyeok Son
, Young Woo Jo
, V. Sindhuri
, Ki Sik Im
, Jae Hwa Seo
, Yong Tae Kim
, In Man Kang
, Sorin Cristoloveanu
, Maryline Bawedin
, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University
Korea Institute of Science and Technology
Grenoble Institute of Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

AlGaN/GaN FinFETs with various fin widths (W_fin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide W_fin of 150 nm showed normally-on operation with threshold voltage (V_th) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (g_m), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with W_fin of 50 nm exhibited normally-off operation with V_th of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.

Original language	English
Pages (from-to)	155-158
Number of pages	4
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.101
State	Published - 1 Nov 2015

Keywords

2DEG
AlGaN/GaN
Fin width
FinFET
TMAH solution
Trapping/detrapping

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10.1016/j.mee.2015.04.101

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@article{339af28c499445eda5d0dc81cbafa76d,

title = "Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET",

abstract = "AlGaN/GaN FinFETs with various fin widths (Wfin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide Wfin of 150 nm showed normally-on operation with threshold voltage (Vth) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (gm), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with Wfin of 50 nm exhibited normally-off operation with Vth of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.",

keywords = "2DEG, AlGaN/GaN, Fin width, FinFET, TMAH solution, Trapping/detrapping",

author = "Son, \{Dong Hyeok\} and Jo, \{Young Woo\} and V. Sindhuri and Im, \{Ki Sik\} and Seo, \{Jae Hwa\} and Kim, \{Yong Tae\} and Kang, \{In Man\} and Sorin Cristoloveanu and Maryline Bawedin and Lee, \{Jung Hee\}",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.mee.2015.04.101",

language = "English",

volume = "147",

pages = "155--158",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

AU - Son, Dong Hyeok

AU - Jo, Young Woo

AU - Sindhuri, V.

AU - Im, Ki Sik

AU - Seo, Jae Hwa

AU - Kim, Yong Tae

AU - Kang, In Man

AU - Cristoloveanu, Sorin

AU - Bawedin, Maryline

AU - Lee, Jung Hee

PY - 2015/11/1

Y1 - 2015/11/1

N2 - AlGaN/GaN FinFETs with various fin widths (Wfin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide Wfin of 150 nm showed normally-on operation with threshold voltage (Vth) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (gm), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with Wfin of 50 nm exhibited normally-off operation with Vth of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.

AB - AlGaN/GaN FinFETs with various fin widths (Wfin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide Wfin of 150 nm showed normally-on operation with threshold voltage (Vth) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (gm), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with Wfin of 50 nm exhibited normally-off operation with Vth of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.

KW - 2DEG

KW - AlGaN/GaN

KW - Fin width

KW - FinFET

KW - TMAH solution

KW - Trapping/detrapping

UR - https://www.scopus.com/pages/publications/84928389904

U2 - 10.1016/j.mee.2015.04.101

DO - 10.1016/j.mee.2015.04.101

M3 - Article

AN - SCOPUS:84928389904

SN - 0167-9317

VL - 147

SP - 155

EP - 158

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Abstract

Keywords

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