Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor

Hyeok Kim; Jin Hyuk Bae; Gilles Horowitz; Woo Young Kim; Yoonseuk Choi

doi:10.1016/j.sse.2012.12.014

Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor

Hyeok Kim, Jin Hyuk Bae, Gilles Horowitz, Woo Young Kim, Yoonseuk Choi

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have investigated effects of the solvent polarity of a polymeric insulator on field-effect mobility in a pentacene used thin-film transistor (TFT). In our work, we used a poly(4-vinylphenol) (PVP) as a gate insulator to dissolve three different solvents. As the solvent polarity of the PVP solution is increased, the field-effect mobility is dramatically increased by a factor of five (from 0.30 cm²/Vs to 1.51 cm²/Vs). We found that an increase of polar solvents in polymeric insulators results in improved electrical properties in the organic TFTs.

Original language	English
Pages (from-to)	140-143
Number of pages	4
Journal	Solid-State Electronics
Volume	81
DOIs	https://doi.org/10.1016/j.sse.2012.12.014
State	Published - 2013

Keywords

Field-effect mobility
Organic TFT
PVP
Solvent polarity

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title = "Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor",

abstract = "We have investigated effects of the solvent polarity of a polymeric insulator on field-effect mobility in a pentacene used thin-film transistor (TFT). In our work, we used a poly(4-vinylphenol) (PVP) as a gate insulator to dissolve three different solvents. As the solvent polarity of the PVP solution is increased, the field-effect mobility is dramatically increased by a factor of five (from 0.30 cm2/Vs to 1.51 cm2/Vs). We found that an increase of polar solvents in polymeric insulators results in improved electrical properties in the organic TFTs.",

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author = "Hyeok Kim and Bae, {Jin Hyuk} and Gilles Horowitz and Kim, {Woo Young} and Yoonseuk Choi",

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AU - Kim, Hyeok

AU - Bae, Jin Hyuk

AU - Horowitz, Gilles

AU - Kim, Woo Young

AU - Choi, Yoonseuk

PY - 2013

Y1 - 2013

N2 - We have investigated effects of the solvent polarity of a polymeric insulator on field-effect mobility in a pentacene used thin-film transistor (TFT). In our work, we used a poly(4-vinylphenol) (PVP) as a gate insulator to dissolve three different solvents. As the solvent polarity of the PVP solution is increased, the field-effect mobility is dramatically increased by a factor of five (from 0.30 cm2/Vs to 1.51 cm2/Vs). We found that an increase of polar solvents in polymeric insulators results in improved electrical properties in the organic TFTs.

AB - We have investigated effects of the solvent polarity of a polymeric insulator on field-effect mobility in a pentacene used thin-film transistor (TFT). In our work, we used a poly(4-vinylphenol) (PVP) as a gate insulator to dissolve three different solvents. As the solvent polarity of the PVP solution is increased, the field-effect mobility is dramatically increased by a factor of five (from 0.30 cm2/Vs to 1.51 cm2/Vs). We found that an increase of polar solvents in polymeric insulators results in improved electrical properties in the organic TFTs.

KW - Field-effect mobility

KW - Organic TFT

KW - PVP

KW - Solvent polarity

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SN - 0038-1101

VL - 81

SP - 140

EP - 143

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor

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Keywords

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