Effects of wall charge leakage and address discharge characteristics under variously sputtered MgO states in AC-PDP

Choon Sang Park; Soo Kwan Jang; Heung Sik Tae; Eun Young Jung; Eun Gi Heo

Effects of wall charge leakage and address discharge characteristics under variously sputtered MgO states in AC-PDP

Choon Sang Park, Soo Kwan Jang, Heung Sik Tae, Eun Young Jung, Eun Gi Heo

School of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The effects of the wall charge leakage and address discharge characteristics are examined under variously sputtered MgO states in the 42-in ac-PDP based on the Vt closed curve analysis. The wall charge leakage and address discharge characteristics are strongly related to the MgO sur-face sputtered by an iterant strong sustain discharge. With an increase in the amount of MgO sputtered from the MgO surface, the luminance is deteriorated, but the wall charge leakage and the variation in the formative address delay time are minimized under the various address on-times during an address-period.

Original language	English
Pages	789-792
Number of pages	4
State	Published - 2008
Event	15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 3 Dec 2008 → 5 Dec 2008

Conference

Conference	15th International Display Workshops, IDW '08
Country/Territory	Japan
City	Niigata
Period	3/12/08 → 5/12/08

Cite this

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title = "Effects of wall charge leakage and address discharge characteristics under variously sputtered MgO states in AC-PDP",

abstract = "The effects of the wall charge leakage and address discharge characteristics are examined under variously sputtered MgO states in the 42-in ac-PDP based on the Vt closed curve analysis. The wall charge leakage and address discharge characteristics are strongly related to the MgO sur-face sputtered by an iterant strong sustain discharge. With an increase in the amount of MgO sputtered from the MgO surface, the luminance is deteriorated, but the wall charge leakage and the variation in the formative address delay time are minimized under the various address on-times during an address-period.",

author = "Park, {Choon Sang} and Jang, {Soo Kwan} and Tae, {Heung Sik} and Jung, {Eun Young} and Heo, {Eun Gi}",

year = "2008",

language = "English",

pages = "789--792",

note = "15th International Display Workshops, IDW '08 ; Conference date: 03-12-2008 Through 05-12-2008",

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TY - CONF

T1 - Effects of wall charge leakage and address discharge characteristics under variously sputtered MgO states in AC-PDP

AU - Park, Choon Sang

AU - Jang, Soo Kwan

AU - Tae, Heung Sik

AU - Jung, Eun Young

AU - Heo, Eun Gi

PY - 2008

Y1 - 2008

N2 - The effects of the wall charge leakage and address discharge characteristics are examined under variously sputtered MgO states in the 42-in ac-PDP based on the Vt closed curve analysis. The wall charge leakage and address discharge characteristics are strongly related to the MgO sur-face sputtered by an iterant strong sustain discharge. With an increase in the amount of MgO sputtered from the MgO surface, the luminance is deteriorated, but the wall charge leakage and the variation in the formative address delay time are minimized under the various address on-times during an address-period.

AB - The effects of the wall charge leakage and address discharge characteristics are examined under variously sputtered MgO states in the 42-in ac-PDP based on the Vt closed curve analysis. The wall charge leakage and address discharge characteristics are strongly related to the MgO sur-face sputtered by an iterant strong sustain discharge. With an increase in the amount of MgO sputtered from the MgO surface, the luminance is deteriorated, but the wall charge leakage and the variation in the formative address delay time are minimized under the various address on-times during an address-period.

UR - http://www.scopus.com/inward/record.url?scp=77954130571&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954130571

SP - 789

EP - 792

T2 - 15th International Display Workshops, IDW '08

Y2 - 3 December 2008 through 5 December 2008

ER -

Effects of wall charge leakage and address discharge characteristics under variously sputtered MgO states in AC-PDP

Abstract

Conference

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