Effects of Zn content on transfer characteristics of indium-gallium-zinc oxide thin-film transistors

Un Bin Han; Joon Hyung Lee; Jeong Joo Kim; Young Woo Heo

doi:10.1166/jno.2012.1378

Effects of Zn content on transfer characteristics of indium-gallium-zinc oxide thin-film transistors

Un Bin Han, Joon Hyung Lee, Jeong Joo Kim, Young Woo Heo

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This study examined the effects of the Zn content on the electrical and optical properties of indiumgallium- zinc oxide (IGZO) films and the aging behavior of IGZO-TFTs. IGZO thin films with different Zn/(In+Ga) ratios were deposited on glass substrates by RF magnetron sputtering and used as channel layers in IGZO-TFTs. The carrier concentration was controlled by the oxygen partial pressure in the deposition process. The calculated optical bandgap energy of the IGZO films increased with increasing oxygen partial pressure and was approximately 3.68~3.82 eV. The optical bandgap decreased with increasing Zn/(In+Ga) ratio. Positive threshold voltage shifts of the IGZO-TFTs were observed during the aging test. The aging-related positive threshold voltage shift in the IGZO TFTs varied with the Zn/(In+Ga) ratio.

Original language	English
Pages (from-to)	471-474
Number of pages	4
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	7
Issue number	5
DOIs	https://doi.org/10.1166/jno.2012.1378
State	Published - Oct 2012

Keywords

IGZO
Indium-Gallium-Zinc Oxide
Thin-Film Transistors

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title = "Effects of Zn content on transfer characteristics of indium-gallium-zinc oxide thin-film transistors",

abstract = "This study examined the effects of the Zn content on the electrical and optical properties of indiumgallium- zinc oxide (IGZO) films and the aging behavior of IGZO-TFTs. IGZO thin films with different Zn/(In+Ga) ratios were deposited on glass substrates by RF magnetron sputtering and used as channel layers in IGZO-TFTs. The carrier concentration was controlled by the oxygen partial pressure in the deposition process. The calculated optical bandgap energy of the IGZO films increased with increasing oxygen partial pressure and was approximately 3.68~3.82 eV. The optical bandgap decreased with increasing Zn/(In+Ga) ratio. Positive threshold voltage shifts of the IGZO-TFTs were observed during the aging test. The aging-related positive threshold voltage shift in the IGZO TFTs varied with the Zn/(In+Ga) ratio.",

keywords = "IGZO, Indium-Gallium-Zinc Oxide, Thin-Film Transistors",

author = "Han, {Un Bin} and Lee, {Joon Hyung} and Kim, {Jeong Joo} and Heo, {Young Woo}",

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AU - Han, Un Bin

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Heo, Young Woo

PY - 2012/10

Y1 - 2012/10

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AB - This study examined the effects of the Zn content on the electrical and optical properties of indiumgallium- zinc oxide (IGZO) films and the aging behavior of IGZO-TFTs. IGZO thin films with different Zn/(In+Ga) ratios were deposited on glass substrates by RF magnetron sputtering and used as channel layers in IGZO-TFTs. The carrier concentration was controlled by the oxygen partial pressure in the deposition process. The calculated optical bandgap energy of the IGZO films increased with increasing oxygen partial pressure and was approximately 3.68~3.82 eV. The optical bandgap decreased with increasing Zn/(In+Ga) ratio. Positive threshold voltage shifts of the IGZO-TFTs were observed during the aging test. The aging-related positive threshold voltage shift in the IGZO TFTs varied with the Zn/(In+Ga) ratio.

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Effects of Zn content on transfer characteristics of indium-gallium-zinc oxide thin-film transistors

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