Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

Byoung Ho Kang; Jae Sung Lee; Sang Won Lee; Sae Wan Kim; Jun Woo Lee; Sai Anand Gopalan; Ji Sub Park; Dae Hyuk Kwon; Jin Hyuk Bae; Hak Rin Kim; Shin Won Kang

doi:10.1038/srep34659

Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

Byoung Ho Kang
, Jae Sung Lee
, Sang Won Lee
, Sae Wan Kim
, Jun Woo Lee
, Sai Anand Gopalan
, Ji Sub Park
, Dae Hyuk Kwon
, Jin Hyuk Bae
, Hak Rin Kim
, Shin Won Kang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br -) in cetyl trimethylammonium bromide (CTAB). The Br - ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m 2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.

Original language	English
Article number	34659
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep34659
State	Published - 30 Sep 2016

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title = "Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices",

abstract = "We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br -) in cetyl trimethylammonium bromide (CTAB). The Br - ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m 2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.",

author = "Kang, \{Byoung Ho\} and Lee, \{Jae Sung\} and Lee, \{Sang Won\} and Kim, \{Sae Wan\} and Lee, \{Jun Woo\} and Gopalan, \{Sai Anand\} and Park, \{Ji Sub\} and Kwon, \{Dae Hyuk\} and Bae, \{Jin Hyuk\} and Kim, \{Hak Rin\} and Kang, \{Shin Won\}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2016.",

year = "2016",

month = sep,

day = "30",

doi = "10.1038/srep34659",

language = "English",

volume = "6",

journal = "Scientific Reports",

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TY - JOUR

T1 - Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

AU - Kang, Byoung Ho

AU - Lee, Jae Sung

AU - Lee, Sang Won

AU - Kim, Sae Wan

AU - Lee, Jun Woo

AU - Gopalan, Sai Anand

AU - Park, Ji Sub

AU - Kwon, Dae Hyuk

AU - Bae, Jin Hyuk

AU - Kim, Hak Rin

AU - Kang, Shin Won

PY - 2016/9/30

Y1 - 2016/9/30

N2 - We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br -) in cetyl trimethylammonium bromide (CTAB). The Br - ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m 2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.

AB - We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br -) in cetyl trimethylammonium bromide (CTAB). The Br - ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m 2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.

UR - https://www.scopus.com/pages/publications/84990173536

U2 - 10.1038/srep34659

DO - 10.1038/srep34659

M3 - Article

AN - SCOPUS:84990173536

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 34659

ER -

Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

Abstract

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