Electric field modulation of ZnO film conductance in ZnO-based FET structures

Y. Kwon; Y. Li; Y. W. Heo; M. Jones; P. H. Holloway; D. P. Norton; S. Li

Electric field modulation of ZnO film conductance in ZnO-based FET structures

Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, S. Li

University of Florida

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

We have fabricated ZnO based-transparent thin film transistor (TFT) structures on glass using pulsed laser deposition. Given the wide bandgap, an FET device based on ZnO would be transparent to visible light. Low leakage current density is realized through the gate using amorphous (CeTb)MgAl ₁₁O ₁₉ (CTMA) as the gate oxide. The dielectric strength is > 5 MV/cm. Based on the temperature and field dependence of the I-V characteristics, the leakage current is controlled by Schottky emission. Capacitance-voltage properties are measured after formation of metal-oxide-semiconductor (MOS) structures, indicating that ZnO is n-type semiconducting material with little hysteresis when the gate voltage is swept. Current-voltage measurements of source/drain current shows modulation of channel conductance. Device structures with different thicknesses were investigated.

Original language	English
Pages	68-72
Number of pages	5
State	Published - 2003
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 12 Oct 2003 → 17 Oct 2003

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	12/10/03 → 17/10/03

Cite this

Kwon, Y., Li, Y., Heo, Y. W., Jones, M., Holloway, P. H., Norton, D. P., & Li, S. (2003). Electric field modulation of ZnO film conductance in ZnO-based FET structures. 68-72. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

@conference{a6a1e06180fb484aaf3f25ebbdd82138,

title = "Electric field modulation of ZnO film conductance in ZnO-based FET structures",

abstract = "We have fabricated ZnO based-transparent thin film transistor (TFT) structures on glass using pulsed laser deposition. Given the wide bandgap, an FET device based on ZnO would be transparent to visible light. Low leakage current density is realized through the gate using amorphous (CeTb)MgAl 11O 19 (CTMA) as the gate oxide. The dielectric strength is > 5 MV/cm. Based on the temperature and field dependence of the I-V characteristics, the leakage current is controlled by Schottky emission. Capacitance-voltage properties are measured after formation of metal-oxide-semiconductor (MOS) structures, indicating that ZnO is n-type semiconducting material with little hysteresis when the gate voltage is swept. Current-voltage measurements of source/drain current shows modulation of channel conductance. Device structures with different thicknesses were investigated.",

author = "Y. Kwon and Y. Li and Heo, {Y. W.} and M. Jones and Holloway, {P. H.} and Norton, {D. P.} and S. Li",

year = "2003",

language = "English",

pages = "68--72",

note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Kwon, Y, Li, Y, Heo, YW, Jones, M, Holloway, PH, Norton, DP & Li, S 2003, 'Electric field modulation of ZnO film conductance in ZnO-based FET structures', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 12/10/03 - 17/10/03 pp. 68-72.

Electric field modulation of ZnO film conductance in ZnO-based FET structures. / Kwon, Y.; Li, Y.; Heo, Y. W. et al.
2003. 68-72 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Electric field modulation of ZnO film conductance in ZnO-based FET structures

AU - Kwon, Y.

AU - Li, Y.

AU - Heo, Y. W.

AU - Jones, M.

AU - Holloway, P. H.

AU - Norton, D. P.

AU - Li, S.

PY - 2003

Y1 - 2003

N2 - We have fabricated ZnO based-transparent thin film transistor (TFT) structures on glass using pulsed laser deposition. Given the wide bandgap, an FET device based on ZnO would be transparent to visible light. Low leakage current density is realized through the gate using amorphous (CeTb)MgAl 11O 19 (CTMA) as the gate oxide. The dielectric strength is > 5 MV/cm. Based on the temperature and field dependence of the I-V characteristics, the leakage current is controlled by Schottky emission. Capacitance-voltage properties are measured after formation of metal-oxide-semiconductor (MOS) structures, indicating that ZnO is n-type semiconducting material with little hysteresis when the gate voltage is swept. Current-voltage measurements of source/drain current shows modulation of channel conductance. Device structures with different thicknesses were investigated.

AB - We have fabricated ZnO based-transparent thin film transistor (TFT) structures on glass using pulsed laser deposition. Given the wide bandgap, an FET device based on ZnO would be transparent to visible light. Low leakage current density is realized through the gate using amorphous (CeTb)MgAl 11O 19 (CTMA) as the gate oxide. The dielectric strength is > 5 MV/cm. Based on the temperature and field dependence of the I-V characteristics, the leakage current is controlled by Schottky emission. Capacitance-voltage properties are measured after formation of metal-oxide-semiconductor (MOS) structures, indicating that ZnO is n-type semiconducting material with little hysteresis when the gate voltage is swept. Current-voltage measurements of source/drain current shows modulation of channel conductance. Device structures with different thicknesses were investigated.

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M3 - Paper

AN - SCOPUS:5744220670

SP - 68

EP - 72

T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Kwon Y, Li Y, Heo YW, Jones M, Holloway PH, Norton DP et al.. Electric field modulation of ZnO film conductance in ZnO-based FET structures. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Electric field modulation of ZnO film conductance in ZnO-based FET structures

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