Electrical behavior of field-emission device with C-base surface layer

Myoung Bok Lee; Ki Rock Kwon; Jae Hoon Lee; Sung Ho Hahm; Jung Hee Lee

doi:10.1116/1.1516182

Electrical behavior of field-emission device with C-base surface layer

Myoung Bok Lee, Ki Rock Kwon, Jae Hoon Lee, Sung Ho Hahm, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A carbon-based ultrathin surface layer was uniformly incorporated onto the poly-Si cathode-tip surface via the FASAC process and the initial phase of carbon clusters was a graphitelike or sp²-bonded amorphous structure resulting in a surface work function of 3-4 eV. With the FASAC process initiated by field activation of preincorporated carbon clusters of ∼100 Å the surface carbons were redistributed onto the near tip surface and also transformed into an sp³-bonded amorphous layer structure resulting in a surface work function of ∼0.1 eV.

Original language	English
Pages (from-to)	511-514
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1516182
State	Published - Jan 2003

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@article{32ea8b337bc24db3aaca348c6cee5bc8,

title = "Electrical behavior of field-emission device with C-base surface layer",

abstract = "A carbon-based ultrathin surface layer was uniformly incorporated onto the poly-Si cathode-tip surface via the FASAC process and the initial phase of carbon clusters was a graphitelike or sp2-bonded amorphous structure resulting in a surface work function of 3-4 eV. With the FASAC process initiated by field activation of preincorporated carbon clusters of ∼100 {\AA} the surface carbons were redistributed onto the near tip surface and also transformed into an sp3-bonded amorphous layer structure resulting in a surface work function of ∼0.1 eV.",

author = "Lee, {Myoung Bok} and Kwon, {Ki Rock} and Lee, {Jae Hoon} and Hahm, {Sung Ho} and Lee, {Jung Hee}",

year = "2003",

month = jan,

doi = "10.1116/1.1516182",

language = "English",

volume = "21",

pages = "511--514",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1 SPEC.",

}

TY - JOUR

T1 - Electrical behavior of field-emission device with C-base surface layer

AU - Lee, Myoung Bok

AU - Kwon, Ki Rock

AU - Lee, Jae Hoon

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

PY - 2003/1

Y1 - 2003/1

N2 - A carbon-based ultrathin surface layer was uniformly incorporated onto the poly-Si cathode-tip surface via the FASAC process and the initial phase of carbon clusters was a graphitelike or sp2-bonded amorphous structure resulting in a surface work function of 3-4 eV. With the FASAC process initiated by field activation of preincorporated carbon clusters of ∼100 Å the surface carbons were redistributed onto the near tip surface and also transformed into an sp3-bonded amorphous layer structure resulting in a surface work function of ∼0.1 eV.

AB - A carbon-based ultrathin surface layer was uniformly incorporated onto the poly-Si cathode-tip surface via the FASAC process and the initial phase of carbon clusters was a graphitelike or sp2-bonded amorphous structure resulting in a surface work function of 3-4 eV. With the FASAC process initiated by field activation of preincorporated carbon clusters of ∼100 Å the surface carbons were redistributed onto the near tip surface and also transformed into an sp3-bonded amorphous layer structure resulting in a surface work function of ∼0.1 eV.

UR - http://www.scopus.com/inward/record.url?scp=0037207766&partnerID=8YFLogxK

U2 - 10.1116/1.1516182

DO - 10.1116/1.1516182

M3 - Article

AN - SCOPUS:0037207766

SN - 1071-1023

VL - 21

SP - 511

EP - 514

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1 SPEC.

ER -

Electrical behavior of field-emission device with C-base surface layer

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