Electrical characteristics of a lateral field emission array for display applications

Jae Hoon Lee; Myoung Bok Lee; Gi Hong Rue; Sung Ho Hahm; Jong Hyun Lee; Jung Hee Lee; Kyu Man Choi; Dae Hyuk Kwon; Young Chul Jung

doi:10.3938/jkps.37.850

Electrical characteristics of a lateral field emission array for display applications

Jae Hoon Lee, Myoung Bok Lee, Gi Hong Rue, Sung Ho Hahm, Jong Hyun Lee, Jung Hee Lee, Kyu Man Choi, Dae Hyuk Kwon, Young Chul Jung

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm² pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and V_GC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.

Original language	English
Pages (from-to)	850-853
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	37
Issue number	6
DOIs	https://doi.org/10.3938/jkps.37.850
State	Published - Dec 2000

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title = "Electrical characteristics of a lateral field emission array for display applications",

abstract = "We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm2 pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and VGC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.",

author = "Lee, {Jae Hoon} and Lee, {Myoung Bok} and Rue, {Gi Hong} and Hahm, {Sung Ho} and Lee, {Jong Hyun} and Lee, {Jung Hee} and Choi, {Kyu Man} and Kwon, {Dae Hyuk} and Jung, {Young Chul}",

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month = dec,

doi = "10.3938/jkps.37.850",

language = "English",

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pages = "850--853",

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TY - JOUR

T1 - Electrical characteristics of a lateral field emission array for display applications

AU - Lee, Jae Hoon

AU - Lee, Myoung Bok

AU - Rue, Gi Hong

AU - Hahm, Sung Ho

AU - Lee, Jong Hyun

AU - Lee, Jung Hee

AU - Choi, Kyu Man

AU - Kwon, Dae Hyuk

AU - Jung, Young Chul

PY - 2000/12

Y1 - 2000/12

N2 - We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm2 pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and VGC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.

AB - We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm2 pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and VGC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.

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DO - 10.3938/jkps.37.850

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VL - 37

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EP - 853

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Electrical characteristics of a lateral field emission array for display applications

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