Electrical characteristics of a lateral field emission array for display applications

Jae Hoon Lee; Myoung Bok Lee; Gi Hong Rue; Sung Ho Hahm; Jong Hyun Lee; Jung Hee Lee; Kyu Man Choi; Dae Hyuk Kwon; Young Chul Jung

doi:10.3938/jkps.37.850

Electrical characteristics of a lateral field emission array for display applications

Jae Hoon Lee
, Myoung Bok Lee
, Gi Hong Rue
, Sung Ho Hahm
, Jong Hyun Lee
, Jung Hee Lee
, Kyu Man Choi
, Dae Hyuk Kwon
, Young Chul Jung

Kyungpook National University
Kwandong University
Kyungil University
Kyongju University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm² pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and V_GC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.

Original language	English
Pages (from-to)	850-853
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	37
Issue number	6
DOIs	https://doi.org/10.3938/jkps.37.850
State	Published - Dec 2000

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title = "Electrical characteristics of a lateral field emission array for display applications",

abstract = "We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm2 pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and VGC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.",

author = "Lee, \{Jae Hoon\} and Lee, \{Myoung Bok\} and Rue, \{Gi Hong\} and Hahm, \{Sung Ho\} and Lee, \{Jong Hyun\} and Lee, \{Jung Hee\} and Choi, \{Kyu Man\} and Kwon, \{Dae Hyuk\} and Jung, \{Young Chul\}",

year = "2000",

month = dec,

doi = "10.3938/jkps.37.850",

language = "English",

volume = "37",

pages = "850--853",

journal = "Journal of the Korean Physical Society",

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TY - JOUR

T1 - Electrical characteristics of a lateral field emission array for display applications

AU - Lee, Jae Hoon

AU - Lee, Myoung Bok

AU - Rue, Gi Hong

AU - Hahm, Sung Ho

AU - Lee, Jong Hyun

AU - Lee, Jung Hee

AU - Choi, Kyu Man

AU - Kwon, Dae Hyuk

AU - Jung, Young Chul

PY - 2000/12

Y1 - 2000/12

N2 - We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm2 pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and VGC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.

AB - We proposed and investigated the characteristics of a lateral field emission array (LFEA) structure with polycrystalline silicon emitters using the LOCOS (local oxidation of polysilicon) process for display applications. We fabricated an LFEA device which had a 600×600 μm2 pixel with 28 cathode tips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 μA/pixel at a substrate-to-cathode voltage of 40 V and VGC=0 V. If phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, the LEFA will be highly applicable as a field emission display with many advantages, such as simple process, easy distance control between the anode and the cathode, and low process cost.

UR - https://www.scopus.com/pages/publications/0034347666

U2 - 10.3938/jkps.37.850

DO - 10.3938/jkps.37.850

M3 - Article

AN - SCOPUS:0034347666

SN - 0374-4884

VL - 37

SP - 850

EP - 853

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Electrical characteristics of a lateral field emission array for display applications

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