Electrical characteristics of multilayer MoS₂ transistors at real operating temperatures and different ambient conditions

We describes observed the electrical characteristics of multilayer MoS₂ thin film transistors (TFTs) through variable temperature measurement (from room temperature up to 350 K) and different operating ambients (in air and in a vacuum, ∼10^-5 Torr). Carrier transport mechanism was predicted through the observed temperature dependent electrical parameters (threshold voltage, field effect mobility, sub-threshold slope). Preliminary evidences was explained that the dominant transport mechanism of multilayer MoS₂ TFTs could be the combination of the optical phonon scattering and thermionic emission depending on the working temperature. Furthermore, through additional low-frequency noise measurement, we supported the expectation that the multilayer MoS₂ has better immunity than single-layer for the effect of chemisorption because multilayer MoS₂ has relativley thick compared to Debye length where real carrier transportation occurs in the underlying channel.