Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs

Bo Gyeong Kim; Ra Hee Kwon; Jae Hwa Seo; Young Jun Yoon; Young In Jang; Min Su Cho; Jung Hee Lee; Seongjae Cho; In Man Kang

doi:10.5370/JEET.2017.12.6.2324

Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs

Bo Gyeong Kim
, Ra Hee Kwon
, Jae Hwa Seo
, Young Jun Yoon
, Young In Jang
, Min Su Cho
, Jung Hee Lee
, Seongjae Cho
, In Man Kang

School of Electronics Engineering

Kyungpook National University
Gachon University

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (I_on), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (L_G) was scaled down. The proposed TFET with a L_G of 5 nm operated with an I_on of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (V_DS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional L_G of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

Original language	English
Pages (from-to)	2324-2332
Number of pages	9
Journal	Journal of Electrical Engineering and Technology
Volume	12
Issue number	6
DOIs	https://doi.org/10.5370/JEET.2017.12.6.2324
State	Published - Nov 2017

Keywords

Drain-induced barrier thinning
Heterojunction
Short-channel effect
Tunneling field-effect transistor
Vertical tunneling

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10.5370/JEET.2017.12.6.2324

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@article{e8fcc900fed443e9afb4364392fea4f6,

title = "Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs",

abstract = "This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (Ion), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (LG) was scaled down. The proposed TFET with a LG of 5 nm operated with an Ion of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (VDS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional LG of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.",

keywords = "Drain-induced barrier thinning, Heterojunction, Short-channel effect, Tunneling field-effect transistor, Vertical tunneling",

author = "Kim, \{Bo Gyeong\} and Kwon, \{Ra Hee\} and Seo, \{Jae Hwa\} and Yoon, \{Young Jun\} and Jang, \{Young In\} and Cho, \{Min Su\} and Lee, \{Jung Hee\} and Seongjae Cho and Kang, \{In Man\}",

note = "Publisher Copyright: {\textcopyright} The Korean Institute of Electrical Engineers.",

year = "2017",

month = nov,

doi = "10.5370/JEET.2017.12.6.2324",

language = "English",

volume = "12",

pages = "2324--2332",

journal = "Journal of Electrical Engineering and Technology",

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publisher = "Korean Institute of Electrical Engineers",

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T1 - Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs

AU - Kim, Bo Gyeong

AU - Kwon, Ra Hee

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Jang, Young In

AU - Cho, Min Su

AU - Lee, Jung Hee

AU - Cho, Seongjae

AU - Kang, In Man

N1 - Publisher Copyright: © The Korean Institute of Electrical Engineers.

PY - 2017/11

Y1 - 2017/11

N2 - This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (Ion), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (LG) was scaled down. The proposed TFET with a LG of 5 nm operated with an Ion of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (VDS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional LG of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

AB - This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (Ion), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (LG) was scaled down. The proposed TFET with a LG of 5 nm operated with an Ion of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (VDS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional LG of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

KW - Drain-induced barrier thinning

KW - Heterojunction

KW - Short-channel effect

KW - Tunneling field-effect transistor

KW - Vertical tunneling

UR - https://www.scopus.com/pages/publications/85032865005

U2 - 10.5370/JEET.2017.12.6.2324

DO - 10.5370/JEET.2017.12.6.2324

M3 - Article

AN - SCOPUS:85032865005

SN - 1975-0102

VL - 12

SP - 2324

EP - 2332

JO - Journal of Electrical Engineering and Technology

JF - Journal of Electrical Engineering and Technology

IS - 6

ER -

Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs

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Keywords

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