@inproceedings{55838510ebfa4f2bae56437efd344196,
title = "Electrical characterization of GaN-channel MOSFETs",
abstract = "The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.",
keywords = "GaN-channel MOSFET, mobility, reliability, subthreshold slope, threshold voltage",
author = "Jakub Jasinski and Lidia Lukasiak and Andrzej Jakubowski and Kim, {Do Kywn} and Kim, {Dong Seok} and Hahm, {Sung Ho} and Lee, {Jung Hee}",
year = "2013",
doi = "10.1117/12.2031288",
language = "English",
isbn = "9780819495211",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Electron Technology Conference 2013",
note = "11th Conference on Electron Technology, ELTE 2013 ; Conference date: 16-04-2012 Through 20-04-2012",
}