Electrical characterization of GaN-channel MOSFETs

Jakub Jasinski; Lidia Lukasiak; Andrzej Jakubowski; Do Kywn Kim; Dong Seok Kim; Sung Ho Hahm; Jung Hee Lee

doi:10.1117/12.2031288

Electrical characterization of GaN-channel MOSFETs

Jakub Jasinski
, Lidia Lukasiak
, Andrzej Jakubowski
, Do Kywn Kim
, Dong Seok Kim
, Sung Ho Hahm
, Jung Hee Lee

School of Electronics Engineering

Warsaw University of Technology
Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.

Original language	English
Title of host publication	Electron Technology Conference 2013
DOIs	https://doi.org/10.1117/12.2031288
State	Published - 2013
Event	11th Conference on Electron Technology, ELTE 2013 - Ryn, Poland Duration: 16 Apr 2012 → 20 Apr 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8902
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	11th Conference on Electron Technology, ELTE 2013
Country/Territory	Poland
City	Ryn
Period	16/04/12 → 20/04/12

Keywords

GaN-channel MOSFET
mobility
reliability
subthreshold slope
threshold voltage

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10.1117/12.2031288

Cite this

@inproceedings{55838510ebfa4f2bae56437efd344196,

title = "Electrical characterization of GaN-channel MOSFETs",

abstract = "The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.",

keywords = "GaN-channel MOSFET, mobility, reliability, subthreshold slope, threshold voltage",

author = "Jakub Jasinski and Lidia Lukasiak and Andrzej Jakubowski and Kim, \{Do Kywn\} and Kim, \{Dong Seok\} and Hahm, \{Sung Ho\} and Lee, \{Jung Hee\}",

year = "2013",

doi = "10.1117/12.2031288",

language = "English",

isbn = "9780819495211",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Electron Technology Conference 2013",

note = "11th Conference on Electron Technology, ELTE 2013 ; Conference date: 16-04-2012 Through 20-04-2012",

}

Jasinski, J, Lukasiak, L, Jakubowski, A, Kim, DK, Kim, DS, Hahm, SH & Lee, JH 2013, Electrical characterization of GaN-channel MOSFETs. in Electron Technology Conference 2013., 89020U, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8902, 11th Conference on Electron Technology, ELTE 2013, Ryn, Poland, 16/04/12. https://doi.org/10.1117/12.2031288

TY - GEN

T1 - Electrical characterization of GaN-channel MOSFETs

AU - Jasinski, Jakub

AU - Lukasiak, Lidia

AU - Jakubowski, Andrzej

AU - Kim, Do Kywn

AU - Kim, Dong Seok

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

PY - 2013

Y1 - 2013

N2 - The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.

AB - The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.

KW - GaN-channel MOSFET

KW - mobility

KW - reliability

KW - subthreshold slope

KW - threshold voltage

UR - https://www.scopus.com/pages/publications/84883092515

U2 - 10.1117/12.2031288

DO - 10.1117/12.2031288

M3 - Conference contribution

AN - SCOPUS:84883092515

SN - 9780819495211

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Electron Technology Conference 2013

T2 - 11th Conference on Electron Technology, ELTE 2013

Y2 - 16 April 2012 through 20 April 2012

ER -

Electrical characterization of GaN-channel MOSFETs

Abstract

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Keywords

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