@inproceedings{2d5ba33f72564d299d6be7ffd59b3edf,
title = "Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation",
abstract = "Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.",
author = "Fedorenko, {Yanina G.} and Hughes, {Mark A.} and Colaux, {Julien L.} and C. Jeynes and Gwilliam, {Russell M.} and Homewood, {Kevin P.} and Jin Yao and Hewak, {Dan W.} and Lee, {Tae Hoon} and Elliott, {Stephen R.} and B. Gholipour and Curry, {Richard J.}",
year = "2014",
doi = "10.1117/12.2037965",
language = "English",
isbn = "9780819498953",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Optical Components and Materials XI",
address = "United States",
note = "Optical Components and Materials XI ; Conference date: 03-02-2014 Through 05-02-2014",
}