Electrical properties of SrBi2Ta2O9 thin films deposited by rf magnetron sputtering

Cheol Hoon Yang; Sang Shik Park; Soon Gil Yoon

doi:10.1080/10584589708221714

Electrical properties of SrBi₂Ta₂O₉ thin films deposited by rf magnetron sputtering

Cheol Hoon Yang, Sang Shik Park, Soon Gil Yoon

Chungnam National University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Ferroelectric bismuth layer oxide SrBi₂Ta₂O₉(SBT) thin films were deposited on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering at 500°C and then, were annealed at 850°C for 1 hr in oxygen ambient. The remanent polarization(2P_r) and the coercive field(2E_c) of a 300nm thick SBT film deposited in 10mtorr were 18.5 μC/cm² and 150kV/cm at an applied voltage of 5V, respectively. The SBT films showed a fatigue-free characteristics up to 10 cycles under 5V bipolar pulse. The leakage current density of the SBT films were about 8.6 × 10^-8 A/cm² at 100kV/cm.

Original language	English
Pages (from-to)	377-387
Number of pages	11
Journal	Integrated Ferroelectrics
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708221714
State	Published - 1997

Keywords

Bi-layered ferroelectrics
FRAM
SrBiTaO

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title = "Electrical properties of SrBi2Ta2O9 thin films deposited by rf magnetron sputtering",

abstract = "Ferroelectric bismuth layer oxide SrBi2Ta2O9(SBT) thin films were deposited on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at 500°C and then, were annealed at 850°C for 1 hr in oxygen ambient. The remanent polarization(2Pr) and the coercive field(2Ec) of a 300nm thick SBT film deposited in 10mtorr were 18.5 μC/cm2 and 150kV/cm at an applied voltage of 5V, respectively. The SBT films showed a fatigue-free characteristics up to 10 cycles under 5V bipolar pulse. The leakage current density of the SBT films were about 8.6 × 10-8 A/cm2 at 100kV/cm.",

keywords = "Bi-layered ferroelectrics, FRAM, SrBiTaO",

author = "Yang, {Cheol Hoon} and Park, {Sang Shik} and Yoon, {Soon Gil}",

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journal = "Integrated Ferroelectrics",

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T1 - Electrical properties of SrBi2Ta2O9 thin films deposited by rf magnetron sputtering

AU - Yang, Cheol Hoon

AU - Park, Sang Shik

AU - Yoon, Soon Gil

PY - 1997

Y1 - 1997

N2 - Ferroelectric bismuth layer oxide SrBi2Ta2O9(SBT) thin films were deposited on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at 500°C and then, were annealed at 850°C for 1 hr in oxygen ambient. The remanent polarization(2Pr) and the coercive field(2Ec) of a 300nm thick SBT film deposited in 10mtorr were 18.5 μC/cm2 and 150kV/cm at an applied voltage of 5V, respectively. The SBT films showed a fatigue-free characteristics up to 10 cycles under 5V bipolar pulse. The leakage current density of the SBT films were about 8.6 × 10-8 A/cm2 at 100kV/cm.

AB - Ferroelectric bismuth layer oxide SrBi2Ta2O9(SBT) thin films were deposited on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at 500°C and then, were annealed at 850°C for 1 hr in oxygen ambient. The remanent polarization(2Pr) and the coercive field(2Ec) of a 300nm thick SBT film deposited in 10mtorr were 18.5 μC/cm2 and 150kV/cm at an applied voltage of 5V, respectively. The SBT films showed a fatigue-free characteristics up to 10 cycles under 5V bipolar pulse. The leakage current density of the SBT films were about 8.6 × 10-8 A/cm2 at 100kV/cm.

KW - Bi-layered ferroelectrics

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KW - SrBiTaO

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M3 - Article

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JO - Integrated Ferroelectrics

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ER -

Electrical properties of SrBi₂Ta₂O₉ thin films deposited by rf magnetron sputtering

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