Electrical transport properties of single ZnO nanorods

Y. W. Heo; L. C. Tien; D. P. Norton; B. S. Kang; F. Ren; B. P. Gila; S. J. Pearton

doi:10.1063/1.1792373

Electrical transport properties of single ZnO nanorods

Y. W. Heo, L. C. Tien, D. P. Norton, B. S. Kang, F. Ren, B. P. Gila, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

163 Scopus citations

Abstract

Catalyst-driven molecular beam epitaxy was used to grow single ZnO nanorods with diameters of ∼130 nm on Au-coated Al ₂O ₃ substrates. As a function of both temperature and gas ambient, the current-voltage characteristics of single ZnO nanorods were measured. The resistivity of nanorods treated in H ₂ at 400 °C prior to measurement showed an activation energy of 0.089±0.02 eV and was insensitive to the ambient used, in the temperature range from 25 to 150 °C. The conductivity of nanorods not treated in H ₂ was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors, by sharp contrast.

Original language	English
Pages (from-to)	2002-2004
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1792373
State	Published - 13 Sep 2004

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title = "Electrical transport properties of single ZnO nanorods",

abstract = "Catalyst-driven molecular beam epitaxy was used to grow single ZnO nanorods with diameters of ∼130 nm on Au-coated Al 2O 3 substrates. As a function of both temperature and gas ambient, the current-voltage characteristics of single ZnO nanorods were measured. The resistivity of nanorods treated in H 2 at 400 °C prior to measurement showed an activation energy of 0.089±0.02 eV and was insensitive to the ambient used, in the temperature range from 25 to 150 °C. The conductivity of nanorods not treated in H 2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors, by sharp contrast.",

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T1 - Electrical transport properties of single ZnO nanorods

AU - Heo, Y. W.

AU - Tien, L. C.

AU - Norton, D. P.

AU - Kang, B. S.

AU - Ren, F.

AU - Gila, B. P.

AU - Pearton, S. J.

PY - 2004/9/13

Y1 - 2004/9/13

N2 - Catalyst-driven molecular beam epitaxy was used to grow single ZnO nanorods with diameters of ∼130 nm on Au-coated Al 2O 3 substrates. As a function of both temperature and gas ambient, the current-voltage characteristics of single ZnO nanorods were measured. The resistivity of nanorods treated in H 2 at 400 °C prior to measurement showed an activation energy of 0.089±0.02 eV and was insensitive to the ambient used, in the temperature range from 25 to 150 °C. The conductivity of nanorods not treated in H 2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors, by sharp contrast.

AB - Catalyst-driven molecular beam epitaxy was used to grow single ZnO nanorods with diameters of ∼130 nm on Au-coated Al 2O 3 substrates. As a function of both temperature and gas ambient, the current-voltage characteristics of single ZnO nanorods were measured. The resistivity of nanorods treated in H 2 at 400 °C prior to measurement showed an activation energy of 0.089±0.02 eV and was insensitive to the ambient used, in the temperature range from 25 to 150 °C. The conductivity of nanorods not treated in H 2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors, by sharp contrast.

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SN - 0003-6951

VL - 85

SP - 2002

EP - 2004

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

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Electrical transport properties of single ZnO nanorods

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