Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

Roy B. Chung; You Da Lin; Ingrid Koslow; Nathan Pfaff; Hiroaki Ohta; Junseok Ha; Steven P. DenBaars; Shuji Nakamura

doi:10.1143/JJAP.49.070203

Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

Roy B. Chung, You Da Lin, Ingrid Koslow, Nathan Pfaff, Hiroaki Ohta, Junseok Ha, Steven P. DenBaars, Shuji Nakamura

University of California, Santa Barbara

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (202̄21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (202̄21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.

Original language	English
Pages (from-to)	702031-702033
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	49
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.070203
State	Published - Jul 2010

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Chung, R. B., Lin, Y. D., Koslow, I., Pfaff, N., Ohta, H., Ha, J., DenBaars, S. P., & Nakamura, S. (2010). Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 49(7 PART 1), 702031-702033. https://doi.org/10.1143/JJAP.49.070203

@article{fe197455d9dd4c1eaa1bde2a4b903667,

title = "Electroluminescence characterization of (20{\=2}21) InGaN/GaN light emitting diodes with various wavelengths",

abstract = "The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (20{\=2}21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (20{\=2}21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.",

author = "Chung, {Roy B.} and Lin, {You Da} and Ingrid Koslow and Nathan Pfaff and Hiroaki Ohta and Junseok Ha and DenBaars, {Steven P.} and Shuji Nakamura",

year = "2010",

month = jul,

doi = "10.1143/JJAP.49.070203",

language = "English",

volume = "49",

pages = "702031--702033",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 PART 1",

}

Chung, RB, Lin, YD, Koslow, I, Pfaff, N, Ohta, H, Ha, J, DenBaars, SP & Nakamura, S 2010, 'Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 49, no. 7 PART 1, pp. 702031-702033. https://doi.org/10.1143/JJAP.49.070203

Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths. / Chung, Roy B.; Lin, You Da; Koslow, Ingrid et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 49, No. 7 PART 1, 07.2010, p. 702031-702033.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

AU - Chung, Roy B.

AU - Lin, You Da

AU - Koslow, Ingrid

AU - Pfaff, Nathan

AU - Ohta, Hiroaki

AU - Ha, Junseok

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2010/7

Y1 - 2010/7

N2 - The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (202̄21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (202̄21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.

AB - The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (202̄21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (202̄21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.

UR - http://www.scopus.com/inward/record.url?scp=77956516976&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.070203

DO - 10.1143/JJAP.49.070203

M3 - Article

AN - SCOPUS:77956516976

SN - 0021-4922

VL - 49

SP - 702031

EP - 702033

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 7 PART 1

ER -

Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

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