Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

Roy B. Chung; You Da Lin; Ingrid Koslow; Nathan Pfaff; Hiroaki Ohta; Junseok Ha; Steven P. DenBaars; Shuji Nakamura

doi:10.1143/JJAP.49.070203

Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

Roy B. Chung
, You Da Lin
, Ingrid Koslow
, Nathan Pfaff
, Hiroaki Ohta
, Junseok Ha
, Steven P. DenBaars
, Shuji Nakamura

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (202̄21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (202̄21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.

Original language	English
Pages (from-to)	702031-702033
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	49
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.070203
State	Published - Jul 2010

Access to Document

10.1143/JJAP.49.070203

Cite this

Chung, R. B., Lin, Y. D., Koslow, I., Pfaff, N., Ohta, H., Ha, J., DenBaars, S. P., & Nakamura, S. (2010). Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 49(7 PART 1), 702031-702033. https://doi.org/10.1143/JJAP.49.070203

@article{fe197455d9dd4c1eaa1bde2a4b903667,

title = "Electroluminescence characterization of (20{\=2}21) InGaN/GaN light emitting diodes with various wavelengths",

abstract = "The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (20{\=2}21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (20{\=2}21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.",

author = "Chung, \{Roy B.\} and Lin, \{You Da\} and Ingrid Koslow and Nathan Pfaff and Hiroaki Ohta and Junseok Ha and DenBaars, \{Steven P.\} and Shuji Nakamura",

year = "2010",

month = jul,

doi = "10.1143/JJAP.49.070203",

language = "English",

volume = "49",

pages = "702031--702033",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "7 PART 1",

}

Chung, RB, Lin, YD, Koslow, I, Pfaff, N, Ohta, H, Ha, J, DenBaars, SP & Nakamura, S 2010, 'Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 49, no. 7 PART 1, pp. 702031-702033. https://doi.org/10.1143/JJAP.49.070203

Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths. / Chung, Roy B.; Lin, You Da; Koslow, Ingrid et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 49, No. 7 PART 1, 07.2010, p. 702031-702033.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

AU - Chung, Roy B.

AU - Lin, You Da

AU - Koslow, Ingrid

AU - Pfaff, Nathan

AU - Ohta, Hiroaki

AU - Ha, Junseok

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2010/7

Y1 - 2010/7

N2 - The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (202̄21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (202̄21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.

AB - The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (202̄21) bulk GaN substrates with wavelengths 469, 487, 510, and 528nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (202̄21) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed.

UR - https://www.scopus.com/pages/publications/77956516976

U2 - 10.1143/JJAP.49.070203

DO - 10.1143/JJAP.49.070203

M3 - Article

AN - SCOPUS:77956516976

SN - 0021-4922

VL - 49

SP - 702031

EP - 702033

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 7 PART 1

ER -

Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths

Abstract

Access to Document

Other files and links

Fingerprint

Cite this