Electromechanical Properties and Spontaneous Response of the Current in InAsP Nanowires

Jong Hoon Lee, Min Wook Pin, Su Ji Choi, Min Hyeok Jo, Jae Cheol Shin, Seong Gu Hong, Seung Mi Lee, Boklae Cho, Sang Jung Ahn, Nam Woong Song, Seong Hoon Yi, Young Heon Kim

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Abstract

The electromechanical properties of ternary InAsP nanowires (NWs) were investigated by applying a uniaxial tensile strain in a transmission electron microscope (TEM). The electromechanical properties in our examined InAsP NWs were governed by the piezoresistive effect. We found that the electronic transport of the InAsP NWs is dominated by space-charge-limited transport, with a I ∞ V2 relation. Upon increasing the tensile strain, the electrical current in the NWs increases linearly, and the piezoresistance gradually decreases nonlinearly. By analyzing the space-charge-limited I-V curves, we show that the electromechanical response is due to a mobility that increases with strain. Finally, we use dynamical measurements to establish an upper limit on the time scale for the electromechanical response.

Original languageEnglish
Pages (from-to)6738-6745
Number of pages8
JournalNano Letters
Volume16
Issue number11
DOIs
StatePublished - 9 Nov 2016

Keywords

  • Indium arsenic phosphide (InAsP) nanowire
  • piezoresistance
  • transmission electron microscopy (TEM)

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