Abstract
The electromechanical properties of ternary InAsP nanowires (NWs) were investigated by applying a uniaxial tensile strain in a transmission electron microscope (TEM). The electromechanical properties in our examined InAsP NWs were governed by the piezoresistive effect. We found that the electronic transport of the InAsP NWs is dominated by space-charge-limited transport, with a I ∞ V2 relation. Upon increasing the tensile strain, the electrical current in the NWs increases linearly, and the piezoresistance gradually decreases nonlinearly. By analyzing the space-charge-limited I-V curves, we show that the electromechanical response is due to a mobility that increases with strain. Finally, we use dynamical measurements to establish an upper limit on the time scale for the electromechanical response.
| Original language | English |
|---|---|
| Pages (from-to) | 6738-6745 |
| Number of pages | 8 |
| Journal | Nano Letters |
| Volume | 16 |
| Issue number | 11 |
| DOIs | |
| State | Published - 9 Nov 2016 |
Keywords
- Indium arsenic phosphide (InAsP) nanowire
- piezoresistance
- transmission electron microscopy (TEM)
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