Electron beam test results with a DC-coupled single-sided strip detector

H. J. Hyun, J. B. Bae, S. W. Jung, D. H. Kah, H. D. Kang, H. J. Kim, M. H. Lee, A. Malinin, H. Park, E. S. Seo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Because silicon strip sensor has a high position resolution compared to the other detectors such as proportional chamber, drift chamber, etc., it has been used in medical imaging, high energy experiment, and space science. We designed and fabricated DC-coupled single-sided silicon strip sensors in a Sinch fabrication line, and developed the signal readout electronics system. We reported the electrical characteristics of the sensors such as capacitances and leakage currents as a function of bias voltage in the 2005 Nuclear Science Symposium including results of the radiation damage test and charge collection efficiencies for various sensor designs, and the signal-to-noise ratio (SNR) measurement results by using a 90Sr β-source and a 45 MeV proton beam were also reported in the 2006 Nuclear Science Symposium. In this meeting we present results of a beam test performed in September 2006 at CERN (European Organization for Nuclear Research) beam facility by using a 150 GeV electron beam with the DC-coupled single-sided silicon strip sensor including readout electronics.

Original languageEnglish
Title of host publication2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Pages642-644
Number of pages3
DOIs
StatePublished - 2007
Event2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI, United States
Duration: 27 Oct 20073 Nov 2007

Publication series

NameIEEE Nuclear Science Symposium Conference Record
Volume1
ISSN (Print)1095-7863

Conference

Conference2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Country/TerritoryUnited States
CityHonolulu, HI
Period27/10/073/11/07

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