Skip to main navigation Skip to search Skip to main content

Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe3GaTe2

  • Ji Eun Lee
  • , Shaohua Yan
  • , Sehoon Oh
  • , Jinwoong Hwang
  • , Jonathan D. Denlinger
  • , Choongyu Hwang
  • , Hechang Lei
  • , Sung Kwan Mo
  • , Se Young Park
  • , Hyejin Ryu
  • Renmin University of China
  • Soongsil University
  • Kangwon National University
  • United States Department of Energy
  • Pusan National University
  • Korea Institute of Science and Technology

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

Fe3GaTe2, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature (TC). In this study, we reveal the electronic structure of Fe3GaTe2 in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction (Jex) and magnetic anisotropy energy to the development of the high-TC ferromagnetic ordering in Fe3GaTe2. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level.

Original languageEnglish
Pages (from-to)11526-11532
Number of pages7
JournalNano Letters
Volume23
Issue number24
DOIs
StatePublished - 27 Dec 2023

Keywords

  • electronic structures
  • FeGaTe
  • Heisenberg exchange interaction
  • high-T ferromagnet
  • magnetic anisotropy energy
  • room-temperature van der Waals ferromagnet

Fingerprint

Dive into the research topics of 'Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe3GaTe2'. Together they form a unique fingerprint.

Cite this